1.

Conference Proceedings
Conference Proceedings
1. Bonding of Hydrogen-Terminated Silicon: Thermal Evolution of the Interfacial Properties
Ploessl, A. ; Scholz, R. ; Schulze, H.-J. ; Hopfe, S.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.224-231,  1999.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-35
2.

Conference Proceedings
Conference Proceedings
2. Pressureless Silicon Direct Bonding in Ultrahigh Vacuum at Room Temperature
Ploessl, A. ; Scholz, R. ; Stenzel, H. ; Richtel, U. ; Schmidthals, C.
Pub. info.: Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding : science, technology, and applications.  pp.417-424,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-36
3.

Conference Proceedings
Conference Proceedings
3. THE INTERFACE OF SILICON SAMPLES JOINED AT ROOM TEMPERATURE BY WAFER DIRECT BONDING IN ULTRAHIGH VACUUM
Ploessl, A. ; Scholz, R. ; Bagdahn, J. ; Stenzel, H. ; Tu, K.N. ; Goesele, U.M.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.1361-1372,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(2)