1.

Conference Proceedings
Conference Proceedings
1. Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20)
Satoh, M. ; Suzuki, T.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.799-802,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Annealing Behavior of N+-Implantation-Induced Defects in SiC at Low Temperatures
Satoh, M. ; Suzuki, T. ; Miyagawa, S.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.791-794,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Evaluation of Schottky Barrier Height of Al, Ti, Au, and Ni Contacts to 3C-SiC
Satoh, M. ; Matsuo, H.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.923-926,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529