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11 results

Conference Proceedings

1. Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress

V. Sverdlov ; S. Selberherr

Pub. info.:	Microelectonics Technology and Devices - SBMicro 2008. pp.159-168, 2008. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	14(1)

Conference Proceedings

2. Analysis of Electromigration in Dual-Damascene Interconnect Structures

R. Lacerda de Orio ; S. Carniello ; H. Ceric ; S. Selberherr

Pub. info.:	Microelectonics Technology and Devices - SBMicro 2008. pp.337-348, 2008. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	14(1)

Conference Proceedings

3. Efficient Calculation of Lifetime Based Direct Turmeling Through Stacked Dielectrics

H. Karner ; A. Gehring ; S. Holzer ; H. Kosina ; S. Selberherr

Pub. info.:	Physics and technology of high-k gate dielectrics III. pp.693-704, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(5)

Conference Proceedings

4. Analysis of Hole Transport in Arbitrarily Strained Germanium

G. Karlowatz ; E. Ungersboeck ; H. Kosina ; W. Wessner ; S. Selberherr

Pub. info.:	SiGe and Ge, materials, processing, and devices. pp.443-450, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(7)

Conference Proceedings

5. A Study of Boron Implantation into High Ge Content SiGe Alloys

R. Wittmann ; S. Uppal ; A. Hoessinger ; J. Cervenka ; S. Selberherr

Pub. info.:	SiGe and Ge, materials, processing, and devices. pp.667-676, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(7)

Conference Proceedings

6. Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress

C. Hollauer ; H. Ceric ; S. Selberherr

Pub. info.:	Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5. pp.103-114, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(1)

Conference Proceedings

7. Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations

E. Ungersboeck ; V. Sverdlov ; H. Kosina ; S. Selberherr

Pub. info.:	SiGe and Ge, materials, processing, and devices. pp.45-54, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(7)

Conference Proceedings

8. Numerical Analysis of Gate Stacks

M. Karner ; S. Holzer ; W. Goes ; M. Vasicek ; M. Wagner ; H. Kosina ; S. Selberherr

Pub. info.:	Physics and technology of high-k gate dielectrics 4. pp.299-308, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(3)

Conference Proceedings

9. Electromigration Modeling for Interconnect Structures in Microelectronics

H. Ceric ; S. Selberherr

Pub. info.:	Microelectronics Technology and Devices : SBMICRO 2007. pp.295-304, 2007. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	9(1)

10.

Conference Proceedings

10. Three-dimensional simulation of sacrificial etching

J. Cervenka ; H. Ceric ; S. Selberherr

Pub. info.:	Smart sensors, actuators, and MEMS III : 2-4 May 2007, Maspalomas, Gran Canaria, Spain. 2007. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	6589

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