1.

Conference Proceedings
Conference Proceedings
1. KINETICS OF NiSi FORMATION BY SOLID STATE DIFFUSION IN Pt/NiCr/Si VIA GROWTH OF AN AMORPHOUS Cr-RICH BARRIER LAYER
Patnaik, B.K. ; Lee, Ju Hyeon ; Adams, D. ; Rozgonyi, G.A. ; Parikh, N.R. ; Swanson, M.L. ; Salih, A.S.M. ; Balducci, P.
Pub. info.: Kinetics of phase transformations : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.275-280,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 205
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Conference Proceedings
Conference Proceedings
2. THIN Ni SILICIDE FORMATION BY LOW TEMPERATURE-INDUCED METAL ATOM REACTION WITH ION IMPLANTED AMORPHOUS SILICON
Erokhin, Yu.N. ; Patnaik, B.K. ; Pramanick, S. ; Hong, F. ; White, C.W. ; Rozgonyi, G.A.
Pub. info.: Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.237-242,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 279
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Conference Proceedings
Conference Proceedings
3. INTERFACE REACTION AND ATOMIC TRANSPORT DURING CoSi2 FILM FORMATION
Xiao, Z. G. ; Honeycutt, J. W. ; Rozgonyi, G.A.
Pub. info.: Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A..  pp.429-434,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 260
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Conference Proceedings
Conference Proceedings
4. STABILITY OF NANCOSCALE COBALT SILICDE FILM FORMATION ON POLYSILICON
Pramanick, S. ; Erokhin, Yu N. ; Patnaik, B. K. ; Rozgonyi, G.A. ; Gambino, J. P.
Pub. info.: Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A..  pp.435-440,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 260
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Conference Proceedings
Conference Proceedings
5. THE CHARACTERIZATION OF 0.1 pm LPD (LIGHT POINT DEFECT) PATTERNS IN MASS PRODUCTION OF SILICON WAFER WAFER
Oh, H.-S. ; Maeng, H.-J. ; Bae, K.-M. ; Kim, J.-R. ; Hong, Y.-K. ; Shin, J.-S. ; Kwon, J.-H. ; Rozgonyi, G.A. ; Lee, H.-L.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.707-726,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(1)
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Conference Proceedings
Conference Proceedings
6. STRUCTURE AND MORPHOLOGY OF 'D-DEFECTS' IN CZ Si
Park, J-G. ; Kirk, H. ; Cho, K-C. ; Lee, H-K. ; Lee, C-S. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology.  pp.370-378,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-10
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Conference Proceedings
Conference Proceedings
7. LOW TEMPERATURE IMPURITY GETTERING FOR GIGA-SCALE INTEGRATED CIRCUIT TECHNOLOGY
Rozgonyi, G.A. ; Koveshnikov, S. ; Agarwal, A.
Pub. info.: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology.  pp.868-883,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-10
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Conference Proceedings
Conference Proceedings
8. EFFECT OF HEAVY BORON DOPING ON OXIDE PRECIPITATE GROWTH IN CZOCHRALSKI SILICON
Ono, T. ; Asayama, E. ; Horie, H. ; Hourai, M. ; Sueoka, K. ; Tsuya, H. ; Rozgonyi, G.A.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.1113-1125,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(2)
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Conference Proceedings
Conference Proceedings
9. Oxygen Precipitation Behaviour in 300 mm Polished Czochralski Silicon Wafers
Ono, T. ; Rozgonyi, G.A. ; Au, C. ; Messina, T. ; Goodall, R.K. ; Huff, H.R.
Pub. info.: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.125-134,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-13
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Conference Proceedings
Conference Proceedings
10. DIRECT OBSERVATION OF MEDIUM FIELD BREAKDOWN ORIGIN ON MOS CAPACITORS CONTAINING GROWN-IN CZ CRYSTAL DEFECTS
Tamatsuka, M. ; Radzimski, Z. ; Rozgonyi, G.A. ; Oka, S. ; Kato, M. ; Kitagawara, Y.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.1593-1609,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(2)
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Conference Proceedings
Conference Proceedings
11. SURFACE MORPHOLOGIES AND INTERFACES OF TiSi2 FORMED FROM UHV DEPOSITED Ti ON Si
Jeon, Hyeongtag, ; Nemanich, R.J. ; Honeycutt, J.W. ; Rozgonyi, G.A.
Pub. info.: Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.307-312,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 160
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Conference Proceedings
Conference Proceedings
12. Structural identification of electrically active defects in the active layer of SIMOX wafers
Bondarenko, I.E. ; Kononchuk, O.V. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Eighth International Symposium on Silicon-on-Insulator Technology and Devices.  pp.185-190,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-23
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Conference Proceedings
Conference Proceedings
13. Impact of Heavy Boron and Antimony Doping on COPs and GOI
Ono, T. ; Hone, H. ; Miyazaki, M. ; Tsuya, H. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Third International Symposium on Defects in Silicon.  pp.300-312,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-1
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Conference Proceedings
Conference Proceedings
14. Photoexcitation Induced Suppression of Point Defect Formation during Ion Implantation in Silicon
Cho, C.R. ; Yarykin, N. ; Rozgonyi, G.A. ; Zuhr, R.A.
Pub. info.: Proceedings of the Third International Symposium on Defects in Silicon.  pp.172-180,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-1
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Conference Proceedings
Conference Proceedings
15. AGGLOMERATION OF COBALT SILICIDE FILMS
Xiao, Z.G. ; Rozgonyi, G.A. ; Canovai, C.A. ; Osburn, C.M.
Pub. info.: Evolution of thin-film and surface microstructure : symposium held November 26-December 1, 1990, Boston, Massachusetts, U.S.A..  pp.101-106,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 202
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Conference Proceedings
Conference Proceedings
16. POINT DEFECT INJECTION AND ENHANCED Sb DIFFUSION IN Si DURING Co-Si AND Ti-Si REACTIONS
Honeycutt, J.W. ; Rozgonyi, G.A.
Pub. info.: Defects in materials : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.517-522,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 209
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Conference Proceedings
Conference Proceedings
17. INVITED: SILICON WAFER DEFECT ENGINEERING
Rozgonyi, G.A.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.279-300,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(1)
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Conference Proceedings
Conference Proceedings
18. Effect of Al or Poly-Si Gate Electrodes and Oxide Thickness on Gate Oxide Integrity and Leakage Site Observations
Tamatsuka, M. ; Kimura, M. ; Oka, S. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Fourth International Symposium on High Purity Silicon.  pp.345-356,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-13
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Conference Proceedings
Conference Proceedings
19. An Investigation of Single and Dual Type 'Crystal Originated Particles'
Gonzalez, F. ; Rozgonyi, G.A. ; Gilgen, B. ; Barbour, R.
Pub. info.: Proceedings of the Fourth International Symposium on High Purity Silicon.  pp.357-368,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-13
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Conference Proceedings
Conference Proceedings
20. SURFACE RECOMBINATION VELOCITY AND RECOMBINATION LIFETIME IN IRON CONTAMINATED SILICON
Buczkowski, A. ; Shimura, F. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.495-504,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-7
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Conference Proceedings
Conference Proceedings
21. Gettering of Fe, Cu and Ni in MeV Ion Implanted Epitaxial Silicon
Koveshnikov, S. ; Kononchuk, O. ; Beaman, K. ; Rozgonyi, G.A. ; Gonzalez, F.
Pub. info.: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.341-354,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-13
22.

Conference Proceedings
Conference Proceedings
22. Oxide Defects Annihilation/Generation by High-Temperature Annealing: A Gate Oxide Integrity Evaluation
Tamatsuka, M. ; Sasaki, T. ; Hagimoto, K. ; Rozgonyi, G.A.
Pub. info.: ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology.  pp.183-196,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-3
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Conference Proceedings
Conference Proceedings
23. Multilayer Defect Structure Formed Under High Energy Ion Implantation in Si
Uspenskaya, L. ; Cho, C.R. ; Yarykin, N. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Third International Symposium on Defects in Silicon.  pp.181-186,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-1
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Conference Proceedings
Conference Proceedings
24. Gate Oxide Integrity in DRAM Devices: The Influence of Substrate D-Defects
Park, J.-G. ; Rozgonyi, G.A. ; Lee, C.-S. ; Choi, S.-P.
Pub. info.: ULSI science and technology, 1995 : proceedings of the Fifth International Symposium on Ultra Large Scale Integration Science and Technology.  pp.457-471,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-5
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Conference Proceedings
Conference Proceedings
25. INFLUENCE OF SILICON SUBSTRATE ION IMPLANTATION ON THE SUBSEQUENT MICROSTRUCTURE EVOLUTION IN COBALT SILICIDE FILMS
Xiao, Z.G. ; Honeycutt, J.W. ; Rozgonyi, G.A.
Pub. info.: Evolution of thin-film and surface microstructure : symposium held November 26-December 1, 1990, Boston, Massachusetts, U.S.A..  pp.259-264,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 202
26.

Conference Proceedings
Conference Proceedings
26. THICKNESS DEPENDENCE OF EPITAXIAL TiSi2 ON Si(111)
Jeon, Hyeongtag ; Honeycutt, J.W. ; Sukow, C.A. ; Rozgonyi, G.A. ; Nemanich, R.J.
Pub. info.: Evolution of thin-film and surface microstructure : symposium held November 26-December 1, 1990, Boston, Massachusetts, U.S.A..  pp.673-678,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 202
27.

Conference Proceedings
Conference Proceedings
27. Comparison of Oxide Breakdown Mechanism Due to D-Defects and Oxygen Precipitates
Park, J.G. ; Ushio, S. ; Takeno, H. ; Cho, K.-C. ; Kim, J.-K. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Symposium on Diagnostic Techniques for Semiconductor Materials and Devices.  pp.53-64,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-33
28.

Conference Proceedings
Conference Proceedings
28. Electric Field Effect on Iron-Boron Pair/Interstitial Iron Dissociation/Re-Assodation
Kikuchi, H. ; Agarwai, A. ; Koveshnikov, S. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects.  pp.298-304,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-1
29.

Conference Proceedings
Conference Proceedings
29. Temperature Dependent Electron Beam Induced Current Studies of MOS Capacitor Structures
Kirk, H.R. ; Park, J.G. ; Lee, D.M. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects.  pp.275-285,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-1
30.

Conference Proceedings
Conference Proceedings
30. Correlat ion of Substrate D-Defects in CZ Silicon with MOS Breakdown
Park, J-G. ; Kirk, H. ; Lee, C-S. ; Lee, H-K. ; Lee, D-M. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects.  pp.57-71,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-1
31.

Conference Proceedings
Conference Proceedings
31. EBIC and SEM Studies of Enhanced DIffusion of Arsenic along Misfit Dislocations in Epltaxial Si/Si(Ge)
Braga, N. ; Buczkowski, A. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects.  pp.157-166,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-1
32.

Conference Proceedings
Conference Proceedings
32. Metastability of Electronic Properties of Interfacial Defects in Si/Si(Ge) Heterostructures
Koveshnikov, S.V. ; Agarwai, A. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects.  pp.167-175,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-1
33.

Conference Proceedings
Conference Proceedings
33. Non-Contact Full Wafer Evaluation of Deep Levels in Silicon Via Temperature Dependent Surface Recombination Velocity, and Carrier Lifetime
Buczkowski, A. ; Rozgonyi, G.A. ; Shimura, F.
Pub. info.: Proceedings of the Symposium on Contamination Control and Defect Reduction in Semiconductor Manufacturing II.  pp.1-14,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-3
34.

Conference Proceedings
Conference Proceedings
34. EBIC and TEM Study of Process Induced Defects in SOI Wafers
Bondarenko, I.E. ; Kononchuk, O.V. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices.  pp.32-38,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-12
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Conference Proceedings
Conference Proceedings
35. Novel GOI Failure Analysis Using SEM/MOS/EBIC with SubNano Ampere Current Breakdown
Tamatsuka, M. ; Oka, S. ; Kirk, H.R. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices.  pp.80-91,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-12