1.

Conference Proceedings
Conference Proceedings
1. Surface Pit Formation and Time Dependent Growth During Hydrogen Annealing of Cz Si Wafers
Bae, K.-M. ; Rozgonyi, G. ; Shin, J.-S. ; Oh, H.-S.
Pub. info.: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.292-303,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-13
2.

Conference Proceedings
Conference Proceedings
2. A Vacancy/Oxygen Based Model Describing Radial Distribution of Voids, OSF-Ring, and AOP in Ring Structure of Cz Silicon Crystals
Bae, K.-M. ; Rozgonyi, G. ; Kim, J.-R. ; Oh, H.-S.
Pub. info.: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.147-157,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-13
3.

Conference Proceedings
Conference Proceedings
3. Crystal originated particles (COPs), bulk defects including the OSF ring, gate oxide integrity (GOI), and DRAM yield
Rozgonyi, G. ; Tamatsuka, M. ; Bae, K.-M. ; Gonzales, F.
Pub. info.: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.153-172,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-22
4.

Conference Proceedings
Conference Proceedings
4. In Situ Deep Level Transient Spectroscopy of Defect Evolution in Silicon Following Ion Implantation at 80 K
Cho, C. R. ; Brown, R. A. ; Kononchuk, O. ; Yarykin, N. ; Rozgonyi, G. ; Zuhr, R.
Pub. info.: Silicon front-end technology--materials processing and modelling, symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.73-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 532