1.

Conference Proceedings
Conference Proceedings
1. Electrical transport properties of highly doped N-type GaN epilayers
Lee,H.J. ; Cheong,M.G. ; Suh,E.-K. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California.  pp.321-326,  1998.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3287
2.

Conference Proceedings
Conference Proceedings
2. Recent advances in III-nitride materials: characterrization and device applications (Invited Paper)
Razeghi,M. ; Zhang,X. ; Kung,P. ; Saxier,A. ; Walker,D. ; Lim,K. Y. ; Kim,K. S.
Pub. info.: Solid state crystals in optoelectronics and semiconductor technology : 7-11 October 1996, Zakopane, Poland.  pp.2-11,  1997.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3179
3.

Conference Proceedings
Conference Proceedings
3. New Developments in III-Nitride Material and Device Applications
Razeghi,M. ; Saxler,A. ; Kung,P. ; Walker,D. ; Zhang,X. ; Kim,K.S. ; Vydyanath,H.R. ; Solomon,J. ; Ahoujja,M. ; Mitchel,W.C.
Pub. info.: Physics of - Semiconductor Devices -.  Part 1  pp.277-284,  1998.  New Delhi.  Narosa Publishing House
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3316
4.

Conference Proceedings
Conference Proceedings
4. Reliable high-power uncoated Al-free lnGaAsP/GaAs lasers for cost-sensitive optical communication and processing applications
Razeghi,M.
Pub. info.: Design and manufacturing of WDM devices : 4-5 November 1997, Dallas, Texas.  pp.125-133,  1998.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3234
5.

Conference Proceedings
Conference Proceedings
5. Narrow-gap semiconductor photodiodes (Invited Paper)
Rogalski,A. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California.  pp.2-13,  1998.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3287
6.

Conference Proceedings
Conference Proceedings
6. Growth and characterization of InAs/GaSb type-Il superlattices for long-wavelength infrared detectors
Mohseni,H. ; Michel,E.J. ; Razeghi,M. ; Mitchel W.C. ; Brown,G.J.
Pub. info.: Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California.  pp.30-38,  1998.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3287
7.

Conference Proceedings
Conference Proceedings
7. Growth of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications
Kim,J.D. ; Mohseni,H. ; Wojkowski,J.S. ; Lee,J.J. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California.  pp.338-348,  1999.  Bellingham, Wash., USA.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3629
8.

Conference Proceedings
Conference Proceedings
8. Characterization of self-assembled InGaAs/InGaP quantum dot mid-infrared photoconductive detectors grown by low-pressure MOCVD
Kim,S. ; Erdtmann,M. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California.  pp.371-380,  1999.  Bellingham, Wash., USA.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3629
9.

Conference Proceedings
Conference Proceedings
9. GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio
Kung,P. ; Zhang,X. ; Walker,D. ; Saxler,A. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California.  pp.214-220,  1998.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3287
10.

Conference Proceedings
Conference Proceedings
10. Demonstration of InAsSb/AlInSb double-heterostructure detectors for room temperature operation in the 5- to 8-ｦﾌm wavelength range
Wojkowski,J.S. ; Mohseni,H. ; Kim,J.D. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California.  pp.357-363,  1999.  Bellingham, Wash., USA.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3629
11.

Conference Proceedings
Conference Proceedings
11. Novel InTlSb and InSbBi alloys for uncooled photodetector applications
Lee,J.J. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California.  pp.256-269,  1998.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3287
12.

Conference Proceedings
Conference Proceedings
12. High-quality LEO growth and characterization of GaN films on AI2O3 and Si substrates
Razeghi,M. ; Kung,P. ; Walker,D. ; Hamilton,M. ; Diaz,J.
Pub. info.: Epilayers and heterostructures in optoelectronics and semiconductor technology : International Conference on Solid State Crystals '98 : 12-16 October 1998, Zakopane, Poland.  pp.14-20,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3725
13.

Conference Proceedings
Conference Proceedings
13. Infrared Photodetectors and Imaging Arrays using Advanced III-V Materials
Razeghi,M.
Pub. info.: Physics of - Semiconductor Devices -.  Part 2  pp.746-753,  1998.  New Delhi.  Narosa Publishing House
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3316
14.

Conference Proceedings
Conference Proceedings
14. Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors
Jelen,C. ; Slivken,S. ; David,T. ; Brown,G.J. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California.  pp.96-104,  1998.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3287
15.

Conference Proceedings
Conference Proceedings
15. Internal stress around micropipes in 6H-SiC substrates
Ohsato,H. ; Kato,T. ; Okuda,T. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California.  pp.393-399,  1999.  Bellingham, Wash., USA.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3629
16.

Conference Proceedings
Conference Proceedings
16. 8.5-ｦﾌm room temperature quantum cascade lasers grown by gas-source molecular beam epitaxy (Invited Paper)
Slivken,S. ; Razeghi,M.
Pub. info.: Integrated optic devices II : 28-30 January 1998, San Jose, California.  pp.314-321,  1998.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3278
17.

Conference Proceedings
Conference Proceedings
17. UV photodetectors based on AlxGa1-xN grown by MOCVD
Saxler,A. ; Walker,D. ; Zhang,X. ; Kung,P. ; Xu,J. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices : 1-2 February 1996.  pp.132-139,  1996.  Bellingham, WA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2685
18.

Conference Proceedings
Conference Proceedings
18. AlGaN ultraviolet detectors
Razeghi,M. ; Rogalski,A.
Pub. info.: Photodetectors : materials and devices II : 12-14 February 1997, San Jose, California.  pp.275-286,  1997.  Bellingham, WA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2999
19.

Conference Proceedings
Conference Proceedings
19. Sb-based infrared materials and photodetectors for the near-room-temperature applications
Kim,J.D. ; Michel,E.J. ; Mohseini,H. ; Wojkowski,J. ; Lee,J.J. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices II : 12-14 February 1997, San Jose, California.  pp.55-66,  1997.  Bellingham, WA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2999
20.

Conference Proceedings
Conference Proceedings
20. Growth models of GaN thin films based on crystal chemistry:hexagonal and cubic GaN on Si substrates
Ohsato,H. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices II : 12-14 February 1997, San Jose, California.  pp.288-297,  1997.  Bellingham, WA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2999
21.

Conference Proceedings
Conference Proceedings
21. Intrinsic AlxGa1-xN photodetectors for the entire compositional range
Walker,D. ; Zhang,X. ; Saxler,A. ; Kung,P. ; Xu,J. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices II : 12-14 February 1997, San Jose, California.  pp.267-274,  1997.  Bellingham, WA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2999
22.

Conference Proceedings
Conference Proceedings
22. Very long wavelength GaAs/GaInP quantum well infrared photodetectors
Jelen,C. ; Slivken,S. ; Brown,G.J. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices II : 12-14 February 1997, San Jose, California.  pp.144-152,  1997.  Bellingham, WA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2999
23.

Conference Proceedings
Conference Proceedings
23. GaN doped with sulphur
Saxier,A. ; Kung,P. ; Zhang,X. ; Walker,D. ; Soiomon,J. ; Ahoujja,M. ; Mitchel,W.C. ; Vydyanath,H.R. ; Razeghi,M.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1161-1166,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
24.

Conference Proceedings
Conference Proceedings
24. Electroluminescence of 111-nitride double heterostructure light emitting diodes with silicon and magnesium doped InGaN
Saxler,A. ; Kim,K.S. ; Walker,D. ; Kung,P. ; Zhang,X. ; Brown,G.J. ; Mitchel,W.C. ; Razeghi,M.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1229-1234,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
25.

Conference Proceedings
Conference Proceedings
25. GaN grown using trimethylgallium and triethylgallium
Saxler,A. ; Kung,P. ; Zhang,X. ; Walker,D. ; Solomon,J. ; Mitchel,W.C. ; Razeghi,M.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1081-1086,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
26.

Conference Proceedings
Conference Proceedings
26. The long wavelength luminescence observation from the self-organised InGaAs quantwn dots grown on(100)GaAs substrate by metalorganic chemical vapor deposition
Kim,K.S. ; Erdtmann,M. ; Razeghi,M.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1643-1652,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
27.

Conference Proceedings
Conference Proceedings
27. Localized epitaxy for vertical cavity surface emitting laser applications
Erdtmann,M. ; Kim,S. ; Razeghi,M.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1637-1642,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
28.

Conference Proceedings
Conference Proceedings
28. Roadmap of semiconductor infrared lasers and detectors for the 2lst century
Razeghi,M.
Pub. info.: Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California.  pp.2-40,  1999.  Bellingham, Wash., USA.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3629
29.

Conference Proceedings
Conference Proceedings
29. Sb-based infrared materials and photodetectors for the 3-to 5-and 8-to 12-ｦﾌm range
Michel,E.J. ; Kim,J.D. ; Park,S. ; Xu,J. ; Ferguson,I.T. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices : 1-2 February 1996.  pp.101-111,  1996.  Bellingham, WA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2685
30.

Conference Proceedings
Conference Proceedings
30. Semiconductor ultraviolet detectors
Razeghi,M. ; Rogalski,A.
Pub. info.: Photodetectors : materials and devices : 1-2 February 1996.  pp.114-125,  1996.  Bellingham, WA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2685
31.

Conference Proceedings
Conference Proceedings
31. GaN,GaAIN,and AIN for use in UV detectors for astrophysics:an update
Kung,P. ; Saxler,A. ; Zhang,X. ; Walker,D. ; Razeghi,M. ; Ulmer,M.P.
Pub. info.: Photodetectors : materials and devices : 1-2 February 1996.  pp.126-131,  1996.  Bellingham, WA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2685
32.

Conference Proceedings
Conference Proceedings
32. Optical absorption and photoresponse in fully quaternary p-type quantum well detectors
Hoff,J.R. ; Jelen,C. ; Slivken,S. ; Brown,G.J. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices : 1-2 February 1996.  pp.62-71,  1996.  Bellingham, WA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2685
33.

Conference Proceedings
Conference Proceedings
33. AlxGa1-xN p-i-n photodiodes on sapphire substrates
Walker,D. ; Kung,P. ; Sandvik,P. ; Wu,J.-J. ; Hamilton,M. ; Lee,I.-H. ; Diaz,J. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California.  pp.193-198,  1999.  Bellingham, Wash., USA.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3629
34.

Conference Proceedings
Conference Proceedings
34. Multicolor 4- to 20-ｦﾌm InP-based quantum well infrared photodetectors
Jelen,C. ; Slivken,S. ; Brown,G.J. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California.  pp.147-154,  1999.  Bellingham, Wash., USA.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3629
35.

Conference Proceedings
Conference Proceedings
35. Electrical characterization of AlxGa1-xN for UV photodetector applications
Saxler,A.W. ; Ahoujja,M. ; Mitchel,W.C. ; Kung,P. ; Walker,D. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California.  pp.211-222,  1999.  Bellingham, Wash., USA.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3629
36.

Conference Proceedings
Conference Proceedings
36. Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth
Kung,P. ; Walker,D. ; Sandvik,P. ; Hamilton,M. ; Diaz,J. ; Lee,I.-H. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California.  pp.223-229,  1999.  Bellingham, Wash., USA.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3629
37.

Conference Proceedings
Conference Proceedings
37. Advantages of Al-free InGaAsP/GaAs lasers for WDM applications
Yi,H.J. ; Razeghi,M.
Pub. info.: Wavelength Division Multiplexing Components.  pp.350-360,  1996.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2690
38.

Conference Proceedings
Conference Proceedings
38. High-power InAsSb/InAsSbP laser diodes emitting at 3-to 5-ｦﾌm range
Razeghi,M. ; Diaz,J. ; Yi,H.J. ; Wu,D. ; Lane,B. ; Rybaltowski,A. ; Xiao,Y.H. ; Jeon,H.
Pub. info.: Integrated Optics Devices: Potential for Commercialization.  pp.14-24,  1997.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2997
39.

Conference Proceedings
Conference Proceedings
39. Operating characteristics of Al-free InGaAsP/GaAs single quantum well high-power laser
Wang,L.J. ; Wu,S.L. ; Diaz,J. ; Eliashevich,I. ; Yi,H.J. ; Razeghi,M.
Pub. info.: Semiconductor Lasers II.  pp.114-117,  1996.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2886
40.

Conference Proceedings
Conference Proceedings
40. Temperature insensitivity of the Al-free InGaAsP lasers for ｦﾋ=808 and 980 nm
Razeghi,M. ; Yi,H. ; Diaz,J. ; Kim,S. ; Erdtmann,M.
Pub. info.: In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared.  pp.243-253,  1997.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3001
41.

Conference Proceedings
Conference Proceedings
41. Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition (Invited Paper)
Razeghi,M. ; Saxler,A. ; Kung,P. ; Walker,D. ; Zhang,X. ; Rybaltowski,A. ; Xiao,Y. ; Yi,H.J. ; Diaz,J.
Pub. info.: In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II.  pp.113-121,  1998.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3284
42.

Conference Proceedings
Conference Proceedings
42. 980-nm GaInAs/GaAsIGaInP QW high-power lasers
Wang,L. ; Wu,S. ; Liu,Y. ; Ning,Y. ; Diaz,J. ; Eliashevich,I. ; Yi,H.J. ; Razeghi,M.
Pub. info.: Semiconductor Lasers III.  pp.102-104,  1998.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3547