1.

Conference Proceedings
Conference Proceedings
1. High-quality LEO growth and characterization of GaN films on AI2O3 and Si substrates
Razeghi,M. ; Kung,P. ; Walker,D. ; Hamilton,M. ; Diaz,J.
Pub. info.: Epilayers and heterostructures in optoelectronics and semiconductor technology : International Conference on Solid State Crystals '98 : 12-16 October 1998, Zakopane, Poland.  pp.14-20,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3725
2.

Conference Proceedings
Conference Proceedings
2. AlxGa1-xN p-i-n photodiodes on sapphire substrates
Walker,D. ; Kung,P. ; Sandvik,P. ; Wu,J.-J. ; Hamilton,M. ; Lee,I.-H. ; Diaz,J. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California.  pp.193-198,  1999.  Bellingham, Wash., USA.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3629
3.

Conference Proceedings
Conference Proceedings
3. Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth
Kung,P. ; Walker,D. ; Sandvik,P. ; Hamilton,M. ; Diaz,J. ; Lee,I.-H. ; Razeghi,M.
Pub. info.: Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California.  pp.223-229,  1999.  Bellingham, Wash., USA.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3629
4.

Conference Proceedings
Conference Proceedings
4. High-power InAsSb/InAsSbP laser diodes emitting at 3-to 5-ｦﾌm range
Razeghi,M. ; Diaz,J. ; Yi,H.J. ; Wu,D. ; Lane,B. ; Rybaltowski,A. ; Xiao,Y.H. ; Jeon,H.
Pub. info.: Integrated Optics Devices: Potential for Commercialization.  pp.14-24,  1997.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2997
5.

Conference Proceedings
Conference Proceedings
5. Operating characteristics of Al-free InGaAsP/GaAs single quantum well high-power laser
Wang,L.J. ; Wu,S.L. ; Diaz,J. ; Eliashevich,I. ; Yi,H.J. ; Razeghi,M.
Pub. info.: Semiconductor Lasers II.  pp.114-117,  1996.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2886
6.

Conference Proceedings
Conference Proceedings
6. Temperature insensitivity of the Al-free InGaAsP lasers for ｦﾋ=808 and 980 nm
Razeghi,M. ; Yi,H. ; Diaz,J. ; Kim,S. ; Erdtmann,M.
Pub. info.: In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared.  pp.243-253,  1997.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3001
7.

Conference Proceedings
Conference Proceedings
7. Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition (Invited Paper)
Razeghi,M. ; Saxler,A. ; Kung,P. ; Walker,D. ; Zhang,X. ; Rybaltowski,A. ; Xiao,Y. ; Yi,H.J. ; Diaz,J.
Pub. info.: In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II.  pp.113-121,  1998.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3284
8.

Conference Proceedings
Conference Proceedings
8. 980-nm GaInAs/GaAsIGaInP QW high-power lasers
Wang,L. ; Wu,S. ; Liu,Y. ; Ning,Y. ; Diaz,J. ; Eliashevich,I. ; Yi,H.J. ; Razeghi,M.
Pub. info.: Semiconductor Lasers III.  pp.102-104,  1998.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3547