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21 results

Conference Proceedings

1. Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes

Raineri, V. ; Roccaforte, F. ; Libertino, S. ; Ruggiero, A. ; Massimino, V. ; Calcagno, L.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1167-1170, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Characterization of Silicon Carbide Electrochemical Etch in Hydrofluoric Acid Aqueous Solution

D'Arrigo, G. ; Bougiorno, C. ; Raineri, V.

Pub. info.:	State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia. pp.130-135, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-11

Conference Proceedings

3. Functional Voids By Gas Ion Implantation For Applications In Semiconductor Processing

Raineri, V. ; Rimini, E.

Pub. info.:	Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A.. pp.205-216, 2002. Warrendale, Pa. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	719

Conference Proceedings

4. Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance Microscopy

Raineri, V. ; Giannazzo, F. ; Calcagno, L. ; Musumeci, P. ; Roccaforte, F. ; La Via, F.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.655-658, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

5. Comparison between Chemical and Electrical Profiles in Al+ or N+ Implanted and Annealed 6H-SiC

Nipoti, R. ; Carnera, A. ; Raineri, V.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.811-814, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

6. Role of H2 in Low Temperature Post-Oxidation Anneal for Gate Oxide on 6H-SiC

Raineri, V. ; Lombardo, S. ; Musumeci, P. ; Maktari, A.M. ; Calcagno, L.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.639-642, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

7. Electrical Characterization of Nickel Silicide Contacts on Silicon Carbide

Roccaforte, F. ; La Via, F. ; Raineri, V. ; Musumeci, P. ; Calcagno, L.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.893-896, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. Effect of Annealing at High Hydrostatic Pressure of Silicon Implanted with Helium and Oxygen

Misiuk, A. ; Katcki, J. ; Ratajczak, J. ; Raineri, V. ; Bak-Misiuk, J. ; Gawlik, L. ; Bryja, L. ; Jun, J.

Pub. info.:	Atomistic aspects of epitaxial growth. pp.457-466, 2002. Dordrecht. Kluwer Academic Publishers
Title of ser.:	NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:	65

Conference Proceedings

9. Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights

Pierobon, R. ; Meneghesso, G. ; Zanoni, E. ; Roccaforte, F. ; Via, F. La ; Raineri, V.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.933-936, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

10.

Conference Proceedings

10. Ion-Beam Induced Modifications of Titanium Schottky Barrier on 4H-SiC

Roccaforte, F. ; Giannazzo, F. ; Bongiorno, C. ; Libertino, S. ; Via, F. La ; Raineri, V.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.729-732, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

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