1.

Conference Proceedings
Conference Proceedings
1. High Temperature Stability of Oxygen Functionalized Epitaxial Graphene/Metal Contact Interfaces
V.K. Nagareddy ; S.C. Hernández ; V.D. Wheeler ; L.O. Nyakiti ; R.L. Myers-Ward
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.145-148,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8° Off-Cut 4H-SiC Epilayers
V.D. Wheeler ; B.L. VanMil ; R.L. Myers-Ward ; S. Chung ; Y.N. Picard
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.63-66,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
3.

Conference Proceedings
Conference Proceedings
3. Growth of 4H- and 3C-SiC Epitaxial Layers on 4H-SiC Step-Free Mesas
R.L. Myers-Ward ; L.O. Nyakiti ; J.K. Hite ; O.J. Glembocki ; F.J. Bezares
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.119-122,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
4.

Conference Proceedings
Conference Proceedings
4. Electrical Characterization of the Graphene-SiC Heterojunction
T.J. Anderson ; K.D. Hobart ; L.O. Nyakiti ; V.D. Wheeler ; R.L. Myers-Ward
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.641-644,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
5.

Conference Proceedings
Conference Proceedings
5. Temperature Dependent Chemical Sensitivity of Epitaxial Graphene
V.K. Nagareddy ; D.K. Gaskill ; J.L. Tedesco ; R.L. Myers-Ward ; C.R. Eddy
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.691-694,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
6.

Conference Proceedings
Conference Proceedings
6. Positive Temperature Coefficient SiC PiN Diodes
E.A. Imhoff ; K.D. Hobart ; F.J. Kub ; M.G. Ancona ; R.L. Myers-Ward
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.981-984,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
7.

Conference Proceedings
Conference Proceedings
7. Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers
P.B. Klein ; R.L. Myers-Ward ; K.K. Lew ; B.L. VanMil ; C.R. Eddy Jr.
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.203-206,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
8.

Conference Proceedings
Conference Proceedings
8. CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers
S.I. Maximenko ; J.A. Freitas Jr. ; Y.N. Picard ; P.B. Klein ; R.L. Myers-Ward
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.211-214,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
9.

Conference Proceedings
Conference Proceedings
9. A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy
R.E. Stahlbush ; R.L. Myers-Ward ; B.L. VanMil ; D.K. Gaskill ; C.R. Eddy Jr.
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.271-276,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648