1.

Conference Proceedings
Conference Proceedings
1. On the origin of yellow donor-acceptor pair emission iu GaN
Godlewski,M. ; Ivanov,V.Yu. ; Kaminska,A. ; Zuo,H.Y. ; Goldys,E.M. ; Tansley,T.L. ; Barski,A. ; Rossner,U. ; Rouvicre,J.L. ; Arlery,M. ; Grzegory,I. ; Suski,T. ; Porowski,S. ; Bergman,J.P.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1149-1154,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
2.

Conference Proceedings
Conference Proceedings
2. Exciton Dynamics in Homoepitaxial GaN
Monemar,B. ; Bergman,J.P. ; Ivanov,I.G. ; Baranowski,J.M. ; Pakula,K. ; Grzegory,I. ; Porowski,S.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1275-1278,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Photoluminescenee dynamics in the near bandgap region of homoepitaxial GaN layers
Korona,K.P. ; Bergman,J.P. ; Monemar,B. ; Baranowski,J.M. ; Pakula,K. ; Grzegory,I. ; Porowski,S.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1125-1130,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
4.

Conference Proceedings
Conference Proceedings
4. Free Electrons and Resonant Donor State in Gallium Nitride
Perlin,P. ; Suski,T. ; Teisseyre,H. ; Leszczynski,M. ; Grzegory,I. ; Jun,J. ; Bockowski,M. ; Porowski,S. ; Boguslawski,P. ; Bernholc,J. ; Moustakas,T.D.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.23-24,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
5.

Conference Proceedings
Conference Proceedings
5. Luminescence of Doped and Undoped Bulk Crystals of GaN
Teisseyre,H. ; Suski,T. ; Perlin,P. ; Gorczyca,I. ; Leszczynsk,M. ; Grzegory,I. ; Jun,J. ; Porowski,S.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.43-48,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
6.

Conference Proceedings
Conference Proceedings
6. Carrier Localization in Gallium Nitride
Wetzel,C. ; Walukiewicz,W. ; Haller,E.E. ; Ager,J.W.III ; Chen,A. ; Fischer,S. ; Yu,P.Y. ; Jeanloz,R. ; Grzegory,I. ; Porowski,S. ; Suski,T. ; Amano,H. ; Akasaki,I.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.31-36,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
7.

Conference Proceedings
Conference Proceedings
7. Ion Channeling Study of GaN Single Crystals
Turos,A. ; Nowicki,L. ; Stonert,A. ; Leszczynski,M. ; Grzegory,I. ; Porowski,S.
Pub. info.: Materials science applications of ion beam techniques : proceedings of the International Symposium on Materials Science Applications of Ion Beam Techniques, incoeporating the 1st German-Australian Workshop on Ion Beam Analysis, Seeheim, Germany, September 9-12 1996.  pp.419-423,  1997.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 248-249