1.

Conference Proceedings
Conference Proceedings
1. TRACE ANALYSIS OF SILICON SURFACES USING ANGLE- DEPENDENT TOTAL-REFLECTION X-RAY FLUORESCENCE
Streckfuss, N. ; Frey, L. ; Pichler, P. ; Kuegel, M. ; Zielonka, G. ; Ryssel, H.
Pub. info.: Proceedings of the Satellite Symposium to ESSDERC 93 Grenoble/France : crystalline defects and contamination: their impact and control in device manufacturing.  pp.222-231,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-15
2.

Conference Proceedings
Conference Proceedings
2. Influence of RTP on Vacancy Concentrations
Jacob, M. ; Pichler, P. ; Wohs, M. ; Ryssel, H. ; Falster, R.
Pub. info.: Semiconductor process and device performance modeling : symposium held December 2-3, 1997, Boston, Massachusetts, U.S.A..  pp.129-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 490
3.

Conference Proceedings
Conference Proceedings
3. Low-Energy Implantation and Transient-Enhanced Diffusion: Physical Mechanisms and Technology Implications
Cowern, N. E. B. ; Collart, E. J. H. ; Politiek, J. ; Bancken, P. H. L. ; Berkum, J. G. M. van ; Larsen, K. Kyllesbech ; Stolk, P. A. ; Huizing, H. G. A. ; Pichler, P. ; Burenkov, A. ; Gravesteijn, D. J.
Pub. info.: Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.265-,  1997.  Pittsburg, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 469
4.

Conference Proceedings
Conference Proceedings
4. On the Influence of Boron-Interstitial Complexes on Transient Enhanced Diffusion
Stiebel, D. ; Pichler, P. ; Ryssel, H.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A..  pp.141-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 568
5.

Conference Proceedings
Conference Proceedings
5. On the ｢紜symmetrical｢？Behavior of Transient Enhanced Diffusion in Pre-Amorphized Si Wafers
Alquier, D. ; Cowern, N. E. B. ; Pichler, P. ; Armand, C. ; Martinez, A. ; Mathiot, D. ; Omri, M. ; Claverie, A.
Pub. info.: Silicon front-end technology--materials processing and modelling, symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.67-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 532
6.

Conference Proceedings
Conference Proceedings
6. SIMULATION OF BURIED LAYER EXPERIMENTS CONTAIN- ING ALL FOUR DOPANT SPECIES
Ghaderi, K. ; Hobler, G. ; Budil, M. ; Poetzl, H. ; Pichler, P. ; Ryssel, H. ; Hansch, W. ; Eisele, I. ; Tian, C. ; Stingeder, G.
Pub. info.: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology.  pp.613-624,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-10