1.

Conference Proceedings
Conference Proceedings
1. 33 ALD of Advanced High-k and Metal Gate Stacks for MOS Devices
Gutt, J. ; Gopalan, S. ; Brown, G. A. ; Kirsch, P. D. ; Peterson, J. J. ; Gardner, M. ; Li, H.-J. ; Lysaght, P. ; Alshareef, H. N. ; Choi, K. ; Huffman, C. ; Wen, H. C. ; Majhi, P. ; Lee, B. H. ; Chatham, H. ; Park, S. ; Lanee, S. ; Bartholomew, L. ; Senzaki, Y. (Invited Paper)
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.282-292,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
2.

Conference Proceedings
Conference Proceedings
2. Towards 0.5 nm EOT Scaling of HfO2/Metal Electrode Gate Stacks
Peterson, J. J. ; Brown, G. A. ; Matthews, K. ; Gutt, J. ; Gopalan, S. ; Li, H. -J. ; Kirsch, P. ; Barnett, J. ; Moumen, N. ; Huffman, C. ; Majhi, P. ; Chaudhary, N. ; Young, C. D. ; Sassman, B. ; Lee, B. -H. ; Ruelke, H. ; Schuehrer, H. ; Stephan, R. ; Wei, A. ; Werner, T. ; Wieczorek, K. ; Raab, M.
Pub. info.: Dielectrics for nanosystems: materials science, processing, reliability, and manufacturing : proceedings of the First international symposium.  pp.443-451,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-04
3.

Technical Paper
Technical Paper
3. EFFICIENCY OF A THERMOSYPHON FIN WITH NON-UNIFORM INTERNAL CONDENSATION COEFFICIENT
Peterson, J. J. ; Bowman, W. J.
Pub. info.: AIAA paper.  pp.1-5,  2000.  American Institute of Aeronautics and Astronautics
Title of ser.: AIAA Paper : Aerospace Sciences Meeting and Exhibit
Ser. no.: 2000