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21 results

Conference Proceedings

1. Electronic nature of neutral zinc in silicon:FTIR-absorption,uniaxial stress measurements

Kaufmann,B. ; Dornen,A. ; Lang,M. ; Pensl,G. ; Grilnebaum,D. ; Stolwijk,N.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.197-202, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

2. Observation of Five Additional Thermal Donors and Kinetics of Thermal Donor Formation and Annihilation at Temperatures above 500｡？in Czochralski-Grown Si

Gotz,W. ; Pensl,G. ; Zulehner,W.

Pub. info.:	Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992. pp.213-218, 1993. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	117-118

Conference Proceedings

3. High Resolution Photoemission Study of the 6H-SiC/SiO2 Interface

Mattern,B. ; Bassler,M. ; Pensl,G. ; Ley,L.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.375-378, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

4. The Assignment of the 78/2O3meV Double Acceptor in GaAs to BAS Impurity Antisite Centers

Newman,R.C. ; Davidson,B.R. ; Addinall,R. ; Murray,R. ; Emmert,J.W. ; Wagner,J. ; Gotz,W. ; Roos,G. ; Pensl,G.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.229-234, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

5. Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC

Gotz,W. ; Schoner,A. ; Pensl,G. ; Suttrop,W. ; Choyke,W.J. ; Stein,R. ; Leibenzeder,S.

Pub. info.:	Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992. pp.495-500, 1993. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	117-118

Conference Proceedings

6. Coimplantation Effects on the Electrical Properties of Boron and Aluminum Acceptors in 4H-SiC

Itoh,H. ; Troffer,T. ; Pensl,G.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.685-688, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

7. Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competiticn Epitaxy

Frank,T. ; Troffer,T. ; Pensl,G. ; Nordell,N. ; Karlsson,S. ; Schoner,A.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.681-684, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

8. Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals

Muller,St.G. ; Eckstein,R. ; Hartung,W. ; Hofmann,D. ; Kolbl,M. ; Pensl,G. ; Schmitt,E. ; Schmitt,E.J. ; Weber,A.-D. ; Winnacker,A.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.33-36, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

9. Oxygen-Related Defect Centers in 4H Silicon Carbide

Dalibor,T. ; Pensl,G. ; Yamamoto,T. ; Kimoto,T. ; Matsunami,H. ; Sridhara,S.G. ; Nizhner,D.G. ; Devaty,R.P. ; Choyke,W.J.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.553-556, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

10.

Conference Proceedings

10. Calculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiC

Kinoshita,T. ; Itoh,K.M. ; Muto,J. ; Schadt,M. ; Pensl,G. ; Takeda,K.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.295-298, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

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