1.

Conference Proceedings
Conference Proceedings
1. Hydrogenation and Defect Creation in GaAs-Based Devices During High-Density Plasma Processing
Maeda, T. ; Lee, J. W. ; Abernathy, C. R. ; Pearton, S. J. ; Ren, F. ; Constantine, C. ; Shul, R. J.
Pub. info.: Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.209-,  1998.  Warrendale, Pa.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 510
2.

Conference Proceedings
Conference Proceedings
2. Comparison of Novel Chlorine, Bromine, and Iodine Plasma Chemistries for Anisotropic Trench Etching in GaN, InN, and AIN
Cho, Hyun ; Maeda, T. ; MacKenzie, J. D. ; Donovan, S. M. ; Abernathy, C. R. ; Pearton, S. J. ; Shul, R. J. ; Han, J. ; Ren, F.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.501-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
3.

Conference Proceedings
Conference Proceedings
3. Low Bias Dry Etching of SiC and SiCN in ICP NF3 Discharges
Wang, J. J. ; Cho, Hyun ; Lambers, E. S. ; Pearton, S. J. ; Ostling, M. ; Zetterling, C-M. ; Grow, J. M. ; Ren, F. ; Shul, R. J. ; Han, J.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.507-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
4.

Conference Proceedings
Conference Proceedings
4. Dielectrics for GaN-Based MIS Diodes
Ren, F. ; Abernathy, C. R. ; MacKenzie, J. D. ; Gila, B. P. ; Pearton, S. J. ; Hong, M. ; Macos, M. ; Schurman, M. J. ; Baca, A. G. ; Shul, R. J.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.443-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
5.

Conference Proceedings
Conference Proceedings
5. GaN Device Processing
Pearton, S. J. ; Ren, F. ; Zolper, J. C. ; Shul, R. J.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.961-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482