1.

Conference Proceedings
Conference Proceedings
1. Behavior of W and WSix Contact Metallization on n- and P-Type GaN
Cao, X. A. ; Ren, F. ; Lothian, J. R. ; Pearton, S. J. ; Abernathy, C. R. ; Zolper, J. C. ; Cole, M. W. ; Zeitouny, A. ; Eizenberg, M. ; Shul, R. J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.39.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
2.

Conference Proceedings
Conference Proceedings
2. Reliability of implant-isolation regions in highly-doped GaAs-based structures
Ren, F. ; Pearton, S. J. ; Lothian, J. R. ; Fullowan, T. R. ; Abernathy, C. R. ; Chu, S. N. G.
Pub. info.: III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A..  pp.337-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 300
3.

Conference Proceedings
Conference Proceedings
3. Low temperature SiNx as a sacrificial layer in novel device fabrication
Lothian, J. R. ; Ren, F. ; Pearton, S. J. ; Abernathy, C. R. ; Tseng, B. ; Hobson, W. S.
Pub. info.: III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A..  pp.161-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 300
4.

Conference Proceedings
Conference Proceedings
4. Plasma Damage Effects in InAlN Field-Effect Transistors
Ren, F. ; Lothian, J. R. ; Chen, Y. K. ; MacKenzie, J. D. ; Donovan, S. M. ; Abernathy, C. R. ; Vartuli, C. B. ; Lee, J. W. ; Pearton, S. J. ; Wilson, R. G.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.385-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
5.

Conference Proceedings
Conference Proceedings
5. Dry Etch Damage in InN, InGaN and InAlN
Pearton, S. J. ; Lee, J. W. ; MacKenzie, J. D. ; Vartuli, C. B. ; Donovan, S. M. ; Abernathy, C. R. ; Shul, R. J. ; Ren, F. ; Lothian, J. R.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.163-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
6.

Conference Proceedings
Conference Proceedings
6. Metal Contact on Nitride-Based Materials
Ren, F. ; Abernathy, C. R. ; Shurman, M. ; Hong, M. ; Pearton, S. J. ; Lothian, J. R.
Pub. info.: Advanced interconnects and contact materials and processes for future integrated circuits : symposium held April 13-16, 1998, San Francisco, California, U.S.A..  pp.451-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 514
7.

Conference Proceedings
Conference Proceedings
7. HIGH DENSITY MAGNETICALLY CONFINED DRY ETCHING OF METALLIZATION AND DIELECTRICS IN GaAs DEVICE TECHNOLOGY
Pearton, S. J. ; Abernathy, C. R. ; Ren, F. ; Lothian, J. R. ; Kopf, R. P. ; Katz, A.
Pub. info.: Advanced metallization for devices and circuits--science, technology, and manufacturability : symposium held April 4-8, 1994, San Francisco, California, U.S.A..  pp.749-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 337