1.

Conference Proceedings
Conference Proceedings
1. Ultrahigh Implant Activation Efficiency in GaN Using Novel High Temperature RTP System
Cao, X. A. ; Abernathy, C. R. ; Singh, R. K. ; Pearton, S. J. ; Fu, M. ; Sarvepalli, V. ; Sekhar, J. A. ; Zolper, J. C. ; Rieger, D. J. ; Han, J. ; Drummond, T. J. ; Shul, R. J. ; Wilson, R. G.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.463-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
2.

Conference Proceedings
Conference Proceedings
2. Wet Chemical Etching Survey of III-Nitrides
Cho, Hyun ; Hays, D. C. ; Vartuli, C. B. ; Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Ren, F. ; Zolper, J. C.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.265-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
3.

Conference Proceedings
Conference Proceedings
3. GaN Device Processing
Pearton, S. J. ; Ren, F. ; Zolper, J. C. ; Shul, R. J.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.961-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
4.

Conference Proceedings
Conference Proceedings
4. Recent Progress in Implantation and Annealing of GaN and AlGaN
Zolper, J. C. ; Han, J. ; Deusen, S. B. Van ; Crawford, M. H. ; Biefeld, R. M. ; Jun, J. ; Suski, T. ; Baranowski, J. M. ; Pearton, S. J.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.979-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482