1.

Conference Proceedings
Conference Proceedings
1. EFFECTS OF GAMMA-RAY IRRADIATION AND THERMAL ANNEALING ON CHARACTERISTICS OF 3C-SiC MOS STRUCTURE
Yoshikawa, M. ; Morita, Y. ; Itoh, H. ; Nashiyama, I. ; Okumura, H. ; Misawa, S. ; Yoshida, S.
Pub. info.: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.797-802,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 281
2.

Conference Proceedings
Conference Proceedings
2. Structural and Optical Characterization of High-Quality Cubic GaN Epilayers Grown on GaAs and 3C-SiC Substrates by Gas-Source MBE Using RHEED In Situ Monitoring
Okumura, H. ; Balakrishnan, K. ; Feuillet, G. ; Ohta, K. ; Hamaguchi, H. ; Chichibu, S. ; Ishida, Y. ; Yoshida, S.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.435-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
3.

Conference Proceedings
Conference Proceedings
3. Nitridation of GaAs (001)-2x4 Surface Studied by Auger Electron Spectroscopy
Aksenov, I. ; Nakada, Y. ; Okumura, H.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.4.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
4.

Conference Proceedings
Conference Proceedings
4. Observation of Midgap States in GaN with Optical-Isothermal Capacitance Transient Spectroscopy
Hacke, P. ; Miyoshi, H. ; Hiramatsu, K. ; Okumura, H. ; Yoshida, S. ; Okushi, H.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.549-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
5.

Conference Proceedings
Conference Proceedings
5. STM Observation of Nitrided-Ga on Si
Nakada, Y. ; Miwa, S. ; Okumura, H.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.447-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
6.

Conference Proceedings
Conference Proceedings
6. Growth of Cubic GaN by MBE and Its Properties
Yoshida, S. ; Okumura, H. ; Feuillet, G. ; Hacke, P. ; Balakrishnan, K.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.173-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
7.

Conference Proceedings
Conference Proceedings
7. Scandium and Gallium Implantation Doping of Silicon Carbide
Henkel, T. ; Tanaka, Y. ; Kobayashi, N. ; Koutzarov, I. ; Okumura, H. ; Yoshida, S. ; Ohshima, T.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.163-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
8.

Conference Proceedings
Conference Proceedings
8. Surface Reconstructions and III-V Stoichiometry: The Case of Cubic and Hexagonal GaN
Feuillet, G. ; Hecke, P. ; Okumura, H. ; Hamaguchi, H. ; Ohta, K. ; Balakrishnan, K. ; Yoshida, S.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.257-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449