1.

Conference Proceedings
Conference Proceedings
1. Epitaxial Growth of 4H-SiC (0001) by Sublimation Method Using Horizontal Furnace
Park, C.K. ; An, J.H. ; Lee, W.J. ; Shin, B.C. ; Nishino, S.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.267-270,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Homoepitaxial Growth on 4H-SiC (0338) Face by Sublimation Close Space Technique
Yoneda, S. ; Furusho, T. ; Takagi, H. ; Ohta, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.129-132,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
3.

Conference Proceedings
Conference Proceedings
3. Fabrication of Compact Ion Implanter for Silicon Carbide Devices
Mitani, S. ; Yamaguchi, S. ; Furukawa, S. ; Nakata, T. ; Horino, Y. ; Ono, R. ; Hosokawa, Y. ; Miyamoto, M. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.605-608,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
4.

Conference Proceedings
Conference Proceedings
4. Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid
Bahng, W. ; Kitou, Y. ; Nishizawa, S. ; Yamaguchi, H. ; Khan, M. N. ; Oyanagi, N. ; Arai, K. ; Nishino, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.103-106,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
5.

Conference Proceedings
Conference Proceedings
5. Channel Epitaxy of 3C-SiC on Si Substrates by CVD
Nishino, S. ; Okui, Y. ; Jacob, C. ; Ohshima, S.
Pub. info.: Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.15-22,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 742
6.

Conference Proceedings
Conference Proceedings
6. Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8
Sasaki, M. ; Hirai, A. ; Miyanagi, T. ; Furusho, T. ; Nishiguchi, T. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.407-410,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Stress Distribution in 2in SiC Wafer Measured by Photoelastic Method
Sasaki, M. ; Miyanagi, Y. ; Nakayama, K. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.403-406,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Observation of 2in SiC Wafer by SWBXT at SPring-8
Sasaki, M. ; Hirai, A. ; Miyanagi, T. ; Furusho, T. ; Nishiguchi, T. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.411-414,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Donor Densities and Donor Energy Levels in 3C-SiC Determined by a New Method Based on Hall-Effect Measurements
Matsuura, H. ; Masuda, Y. ; Chen, Y. ; Nishino, S.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.495-498,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
10.

Conference Proceedings
Conference Proceedings
10. Characterization of 2 Inch SiC Wafers Made by the Sublimation Method
Sasaki, M. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.267-270,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356