1.

Conference Proceedings
Conference Proceedings
1. Ohmic Contact to n-GaN with TiN Diffusion Barrier
Kaminska, E. ; Piotrowska, A. ; Guziewicz, M. ; Kasjaniuk, S. ; Barcz, A. ; Dynowska, E. ; Bremser, M. D. ; Nam, O. H. ; Davis, R. F.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1055-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
2.

Conference Proceedings
Conference Proceedings
2. Selective Growth GaN and Al0.2Ga0.8N on GaN/AlN/6H-SiC (0001) Multilayer Substrates Via Organometallic Vapor-Phase Epitaxy
Nam, O. H. ; Bremser, M. D. ; Ward, B. L. ; Nemanich, R. J. ; Davis, R. F.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.107-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
3.

Conference Proceedings
Conference Proceedings
3. Organometallic Vapor-Phase Lateral Epitaxy of Low Defect Density GaN Layers
Nam, O. H. ; Zheleva, T. S. ; Bremser, M. D. ; Thomson, D. B. ; Davis, R. F.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.301-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
4.

Conference Proceedings
Conference Proceedings
4. Selection, Growth, and Characterization of Gate Insulators on MOCVD Gallium Nitride for the Use in High Power Field-Effect Devices
Therrien, R. J. ; Nam, O. H. ; Bremser, M. D. ; Lithicum, K. ; Nimii, H. ; Carlson, E. P. ; Lucovsky, G. ; Davis, R. F.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.1107-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482