1.

Conference Proceedings
Conference Proceedings
1. Current Sensing for SiC Power Devices
Tournier, D. ; Vellvehi, M. ; Godignon, P. ; Montserrat, J. ; Planson, D. ; Sarrus, F.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1215-1218,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Correlation Between Structural and Optical Properties of Si Nanocrystals in SiO2: Model for the Visible Light Emission
Garrido, B. ; Lopez, M. ; Gonzalez, O. ; Garcia, C. ; Perez-Rodriguez, A. ; Morante, J.R. ; Bonafos, C. ; Carrada, M. ; Rodriguez, R.J. ; Montserrat, J.
Pub. info.: Ion beam synthesis and processing of advanced materials : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 647
3.

Conference Proceedings
Conference Proceedings
3. Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET
Tournier, D. ; Godignon, P. ; Montserrat, J. ; Planson, D. ; Chante, J.P. ; Sarrus, F.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1403-1406,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. 4H-SiC MIS Structures Using Oxidized Ta2Si as High-k Dielectric
Perez-Tomas, A. ; Godignon, P. ; Mestres, N. ; Tournier, D. ; Montserrat, J. ; Millan, J.
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.211-216,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
5.

Conference Proceedings
Conference Proceedings
5. Correlation between Structural and Optical Properties of Si Nanocrystals in SiO2: Model for the Visible Light Emission
Lopez, M. ; Garrido, B. ; Gonzalez, O. ; Garcia, C. ; perez-Rodriguez, A. ; Morante, J.R. ; Bonafos, C. ; Carrada, M. ; Rodriguez, R.J. ; Montserrat, J.
Pub. info.: Microstructural processes in irradiated materials, 2000 : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 650
6.

Conference Proceedings
Conference Proceedings
6. 4H-SiC MOSFETs Using Thermal Oxidized Ta2Si Films as High-k Gate Dielectric
Perez-Tomas, A. ; Godignon, P. ; Mestres, N. ; Montserrat, J. ; Millan, J.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.713-716,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
7.

Conference Proceedings
Conference Proceedings
7. Effect of Boron Implantation on 6H-SiC N-MOSFET Interface Properties
Godignon, P. ; Jorda, X. ; Vellvehi, M. ; Berberich, S. ; Montserrat, J. ; Ottaviani, L.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1303-1306,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
8.

Conference Proceedings
Conference Proceedings
8. Electrical Characterization of Heavily Al Doped 4H-SiC Layer Grown by Vapor-Liquid-Solid Epitaxy in Al-Si Melt
Godignon, P. ; Jacquier, C. ; Blanque, S. ; Montserrat, J. ; Ferro, G. ; Contreras, S. ; Zielinski, M. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.421-424,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
9.

Conference Proceedings
Conference Proceedings
9. Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET
Tournier, D. ; Godignon, P. ; Montserrat, J. ; Planson, D. ; Chante, J.P. ; Sarrus, F.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1403-1406,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. Characterization of a 4H-SiC High Power Density Controlled Current Limiter
Tournier, D. ; Godignon, Ph. ; Montserrat, J. ; Planson, D. ; Raynaud, C. ; Lazar, M. ; Chante, J.P. ; Sarrus, F. ; Bonhomme, C. ; de Palma, J.F.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.871-874,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436