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12 results

Conference Proceedings

1. Amplification Path Length Dependence Studies of Stimulated Emission From Optically Pumped InGaN/GaN Multiple Quantum Wells

Schmidt, T. J. ; Bidnyk, S. ; Cho, Y-H. ; Fischer, A. J. ; Song, J. J. ; Keller, S. ; Mishra, U. K. ; DenBaars, S. P.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G6.54.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

2. Nondegenerate optical pump-probe spectroscopy of highly excited group III nitrides

Schmidt, T. J. ; Song, J. J. ; Keller, S. ; Mishra, U. K. ; DenBaars, S. P. ; Yang, W.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.433-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

Conference Proceedings

3. MOCVD Growth of High Output Power InGaN Multiple-Quantum-Well Light-Emitting Diode

Kozodoy, P. ; Abare, A. ; Sink, R. K. ; Mack, M. ; Keller, S. ; DenBaars, S. P. ; Mishra, U. K. ; Steigerwald, D.

Pub. info.:	Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.481-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	468

Conference Proceedings

4. Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process

Marchand, H. ; Ibbetson, J. P. ; Fini, P. T. ; Wu, X. H. ; Keller, S. ; DenBaars, S. P. ; Speck, J. S. ; Mishra, U. K.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G4.5.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

5. Optical Characteristics of MOCVD-Grown InGaN/GaN Multiple Quantum Wells Investigated by Excitation Energy Dependent PL and PLE Spectroscopy

Cho, Yong-Hoon ; Song, J. J. ; Keller, S. ; Mishra, U. K. ; DenBaars, S. P.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.267-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

6. Study of Stimulated Emission in InGaN/GaN Multiquantum Wells in the Temperature Range of 175-575 K

Bidnyk, S. ; Cho, Y. H. ; Schmidt, T. J. ; Krasinski, J. ; Song, J. J. ; Keller, S. ; Mishra, U. K. ; DenBaars, S. P.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.199-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

7. Influence of Si-Doping on Carrier Localization of MOCVD-Grown InGaN/GaN Multiple Quantum Wells

Cho, Y-H. ; Schmidt, T. J. ; Bidnyk, S. ; Song, J. J. ; Keller, S. ; Mishra, U. K. ; DenBaars, S. P.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G6.44.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

8. Growth of High Quality (In,Ga,Al)N/GaN Heterostructure Materials and Devices by Atmospheric Pressure MOCVD

DenBaars, S. P. ; Keller, S. ; Keller, B. P. ; Wu. Y. F. ; Kapolnek, D. ; Mishra, U. K.

Pub. info.:	III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.. pp.23-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	423

Conference Proceedings

9. GaInAs/GaInP DOUBLE BARRIER STRUCTURES: GROWTH AND APPLICATION IN TUNNELING DIODES

Reaves, C. M. ; Yen, J. C. ; Cevallos, N. A. ; Mishra, U. K. ; DenBaars, S. P.

Pub. info.:	Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A.. pp.147-, 1994. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	340

10.

Conference Proceedings

10. Comparative study of emission from highly excited (In, Al) GaN thin films and heterostructures

Little, B. D. ; Bidnyk, S. ; Schmidt, T. J. ; Lam, J. B. ; Kwon, Y. H. ; Song, J. J. ; Keller, S. ; Mishra, U. K. ; DenBaars, S. P. ; Yang, W.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.351-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

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