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20 results

Conference Proceedings

1. Phosphorus Doping Effects on Si1-xGex Epitaxial Film Growth in the SiH4-GeH4-PH3 Gas System Using Ultraclean LPCVD

Lee, C.J. ; Sakuraba, M. ; Ishii, M. ; Matsuura, T. ; Murota, J. ; Kawashima, I. ; Yabumoto, N.

Pub. info.:	Chemical vapor deposition : proceedings of the Fourteenth International Conference and EUROCVD-11. pp.1356-1363, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-25

Conference Proceedings

2. Atomic-Order Side-Wail Passivation with Nitrogen in ECR Plasma Etching of Si

Matsuura, T. ; Seino, T. ; Murota, J.

Pub. info.:	Plasma etching processes for sub-quarter micron devices : proceedings of the international symposium. pp.220-225, 1999. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-30

Conference Proceedings

3. 0.1 μm MOSFET with Super Self-Aligned Shallow Junction Electrodes

Ishii, M. ; Goto, K. ; Sakuraba, M. ; Matsuura, T. ; Murota, J. ; Koyanagi, M.

Pub. info.:	ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology. pp.441-452, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-3

Conference Proceedings

4. Atomic-Order Layer Role-Share Etching of Silicon Nitride Using an ECR Plasma

Honda, Y. ; Matsuura, T. ; Murota, J.

Pub. info.:	Proceedings of the twelfth International Symposium on Plasma Processing. pp.94-100, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-4

Conference Proceedings

5. High Quality SilxGex Epitaxial Growth by CVD

Murota, J. ; Sakuraba, M. ; Matsuura, T.

Pub. info.:	Proceedings of the Third International Symposium on Defects in Silicon. pp.189-202, 1999. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-1

Conference Proceedings

6. Super Self-Aligned Processing for Sub 0.1 μm MOS Devices Using Selective Si l-xGexCVD

Kikuchi, T. ; Yamashiro, T. ; Moriya, A. ; Noda, T. ; Yamamoto, Y. ; Deng, C. ; Sakuraba, M. ; Matsuura, T. ; Murota, J.

Pub. info.:	ULSI process integration : proceedings of the first international symposium. pp.147-156, 1999. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-18

Conference Proceedings

7. H-TERMINATION ON Ge (100) AND Si (100) BY DILUTED HF DIPPING AND BY ANNEALING IN H2

Sakuraba, M. ; Matsuura, T. ; Murota, J.

Pub. info.:	Proceedings of the Fifth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing. pp.213-220, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-35

Conference Proceedings

8. IN-SITU HEAVY DOPING OF P AND B IN LOW-TEMPERATURE Si 1-X Ge x EPITAXIAL GROWTH USING ULTRACLEAN LPCVD

Murota, J. ; Moriya, A. ; Sakuraba, M. ; Lee, C.J. ; Matsuura, T.

Pub. info.:	Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology. pp.822-833, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-1(1)

Conference Proceedings

9. Atomic-Order Nitridation of Si By Radical- and Ion-Induced Reactions using an Ultraclean ECR Nitrogen Plasma

Seino, T. ; Matsuura, T. ; Murota, J.

Pub. info.:	Proceedings of the Symposium on Fundamental Gas-phase and Surface Chemistry of Vapor-phase Materials Synthesis. pp.191-196, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-23

10.

Conference Proceedings

10. Atomic-Order Nitridation of the H-Terminated and H-Free Si Surfaces by NH3

Watanabe, T. ; Ichikawa, A. ; Sakuraba, M. ; Matsuura, T. ; Murota, J.

Pub. info.:	Chemical vapor deposition : proceedings of the Fourteenth International Conference and EUROCVD-11. pp.97-104, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-25

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