1.

Conference Proceedings
Conference Proceedings
1. Influence of Excited States of Deep Acceptors on Hole Concentrations in SiC
Matsuura, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.679-682,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. Donor Densities and Donor Energy Levels in 3C-SiC Determined by a New Method Based on Hall-Effect Measurements
Matsuura, H. ; Masuda, Y. ; Chen, Y. ; Nishino, S.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.495-498,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
3.

Conference Proceedings
Conference Proceedings
3. Enhancement of lonization Efficiency of Acceptors by Their Excited States in Heavily Doped p-Type GaN and Wide Bandgap Semiconductors
Matsuura, H.
Pub. info.: State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia.  pp.570-581,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-06
4.

Conference Proceedings
Conference Proceedings
4. Electrical Properties of 3C-SiC Grown on Si by CVD Method using Si2(CH3)6
Masuda, Y. ; Chen, Y. ; Matsuura, H. ; Harima, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.711-714,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
5.

Conference Proceedings
Conference Proceedings
5. Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiC
Matsuura, H. ; Aso, K. ; Kagamihara, S. ; Iwata, H. ; Ishida, T. ; Nishikawa, K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.751-754,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
6.

Conference Proceedings
Conference Proceedings
6. Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiC
Matsuura, H. ; Sugiyama, K. ; Nishikawa, K. ; Nagata, T. ; Fukunaga, N.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.447-450,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
7.

Conference Proceedings
Conference Proceedings
7. Influence of Excited States of Deep Acceptors on Hole Concentrations in SiC
Matsuura, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.679-682,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Raman spectroscopy studies of the OH stretching band of aqueous solutions of short poly(oxyethyelene) C2E2C2
Rupenyan, A. ; Gyamchev, Kr. ; Georgiev, M. ; Goutev, N. ; Nickolov, Zh. ; Georgiev, G. ; Matsuura, H.
Pub. info.: 13th International School on Quantum Electronics: Laser Physics and Applications.  pp.251-255,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5830