1.

Conference Proceedings
Conference Proceedings
1. Acceptor-hydrogen interaction in InAs
Burchard,A. ; Correia,J.G. ; Deicher,M. ; Forkel-Wirth,D. ; Magerle,R. ; Prospero,A. ; Stotzler,A.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1223-1228,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
2.

Conference Proceedings
Conference Proceedings
2. Novel luminescent centres in cadmium doped silicon
Frehill,C.A. ; Henry,M.O. ; McGlynn,E. ; Daly,S.E. ; Deicher,M. ; Magerle,R. ; McGuigan,K.G. ; Safanov,A.N. ; Lightowlers,E.C.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.521-526,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
3.

Conference Proceedings
Conference Proceedings
3. The photoluminescence of Pt-implanted silicon
Alves,E. ; Bollmann,J. ; Deicher,M. ; Carmo,M.C. ; Henry,M.O. ; Knopf,M.H.A. ; Leitao,J.P. ; Magerle,R. ; McDonagh,C.J.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.473-478,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
4.

Conference Proceedings
Conference Proceedings
4. Implantation doping and hydrogen passivation of GaN
Burchard,A. ; Deicher,M. ; Forkel-Wirth,D. ; HaLller,E.E. ; Magerle,R. ; Prospero,A. ; Stotzler,A.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1099-1104,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
5.

Conference Proceedings
Conference Proceedings
5. Creation of GaAs antisites in GaAs by transmutation of radioactive 71AsAs to stable 71GaAs
Magerle,R. ; Burchard,A. ; Forkel-Wirth,D. ; Deicher,M.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.945-950,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
6.

Conference Proceedings
Conference Proceedings
6. The role of caiion vacancy in compensation of II-VI compounds by fast diffusors-example of Cu in CdS
Desnica,U.V. ; Desnica-Frankovic,I.D. ; Magerle,R. ; Burchard,A. ; Deicher,M.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1347-1352,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263