1.

Conference Proceedings
Conference Proceedings
1. Electrical and Structural Properties of AlGaN/GaN Heterostructures Grown onto 8°-Off-Axis 4H-SiC Epilayers
F. Roccaforte ; G. Greco ; M.H. Weng ; F. Giannazzo ; V. Raineri
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.808-811,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
2.

Conference Proceedings
Conference Proceedings
2. Study of the Interface Properties of TiO2/SiO2/SiC by Photocapacitance
M.H. Weng ; S. Barker ; R. Mahapatra ; B.J.D. Furnival ; N.G. Wright
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.350-353,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
3.

Conference Proceedings
Conference Proceedings
3. Electrical Activity of Structural Defects in 3C-SiC
J. Eriksson ; F. Roccaforte ; M.H. Weng ; F. Giannazzo ; J. Lorenzzi
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.273-276,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
4.

Conference Proceedings
Conference Proceedings
4. Influence of Phosphorous Auto-Doping on the Characteristics of SiO2/SiC Gate Dielectrics
M.H. Weng ; A.E. Murphy ; C. Ryan ; B.J.D. Furnival ; D.A. Smith
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.492-495,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
5.

Conference Proceedings
Conference Proceedings
5. Analytical Evaluation of Thermally Oxidized and Deposited Dielectric in NMOS-PMOS devices
M.H. Weng ; M.I. Idris ; H.K. Chan ; A.E. Murphy ; D.A. Smith
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.631-634,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
6.

Conference Proceedings
Conference Proceedings
6. Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC
M.H. Weng ; F. Roccaforte ; F. Giannazzo ; S. Di Franco ; C. Bongiorno
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.713-716,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
7.

Conference Proceedings
Conference Proceedings
7. On the Viability of Au/3C-SiC Schottky Barrier Diodes
J. Eriksson ; M.H. Weng ; F. Roccaforte ; F. Giannazzo ; S. Di Franco
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.677-680,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
8.

Conference Proceedings
Conference Proceedings
8. Reliability of Thin Thermally Grown SiO2 on 3C-SiC Studied by Scanning Probe Microscopy
J. Eriksson ; M.H. Weng ; F. Roccaforte ; F. Giannazzo ; P. Fiorenza
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.833-836,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
9.

Conference Proceedings
Conference Proceedings
9. Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors
M.I. Idris ; M.H. Weng ; H.K. Chan ; A.E. Murphy ; D.A. Smith ; R.A.R. Young ; E.P. Ramsay ; D.T. Clark ; N.G. Wright ; A.B. Horsfall
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.513-516,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897