1.

Conference Proceedings
Conference Proceedings
1. "A ""Heteropoly Acid-Fragment Catalyst"" Active in the Friedel-Crafis Alkylation"
K. Okumura ; K. Yamashita ; K. Yamada ; M. Niwa
Pub. info.: Science and technology in catalysis 2006 : proceedings of the fifth Tokyo Conference on Advanced Catalytic Science and Technology, Tokyo, July 23-28, 2006.  pp.413-416,  2007.  Tokyo.  Elsevier
Title of ser.: Studies in surface science and catalysis
Ser. no.: 172
2.

Conference Proceedings
Conference Proceedings
2. An Approach for Risk Assessment: The Brazilian Case
E. Durante ; F.M. Leme ; M. Niwa ; E.C. Marujo
Pub. info.: Proceedings of the 3rd IAASS Conference : building a safer space together, 21-23 october 2008, Rome, Italy.  2009.  Noordwijk, The Netherlands.  ESA Communication Production Office
Title of ser.: ESA SP
Ser. no.: 662
3.

Conference Proceedings
Conference Proceedings
3. DEVELOPING A SYSTEMATIC APPROACH FOR INDEPENDENT CONFORMITY ASSESSMENT: THE BRAZILIAN CASE
M. Niwa ; C. A. T. Moura
Pub. info.: Proceedings of the 2nd IAASS Conference : space safety in a global world, 14-16 May 2007, Chicago, USA.  2007.  Noordwijk, The Netherlands.  ESA Communication Production Office
Title of ser.: ESA SP
Ser. no.: 645
4.

Conference Proceedings
Conference Proceedings
4. Prospect of Hf-Dared Gate Dielectric by PVD with FUSI Gate for LSTP Application
M. Niwa ; R. Mitsuhashi ; S. Hayashi ; K. Yamamoto ; Y. Harada ; M. Kubota ; A. Rothchild ; T. Hoffmann ; S. Kubicek ; S. DeGendt ; M. Heyns ; A. Lauwers ; S. Biesemans ; J. Kittle
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.269-286,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
5.

Conference Proceedings
Conference Proceedings
5. Ni, Pt and Yb Based Fully Silicided (FUSI) Gates for Scaled CMOS Technologies
J. A. Kitti ; A. Lauwers ; M. van Dal ; H. Yu ; A. Veloso ; T. Hoffinann ; M. Pawlak ; C. Demeurisse ; S. Kubicek ; M. Niwa ; C. Vrancken ; P. Absil ; S. Bieseinans
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment.  pp.233-246,  2006.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(2)