1.

Conference Proceedings
Conference Proceedings
1. Kinetic Model for Arsenic Deactivation in Silicon
Dokumaci, O. ; Law, M.E.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.37-43,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-4
2.

Conference Proceedings
Conference Proceedings
2. Computational Issues for Process Modeling
Law, M.E.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.18-26,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-4
3.

Conference Proceedings
Conference Proceedings
3. Effect of Stress on Point and Extended Defects in Silicon
Chaudhey, S. ; Law, M.E.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.407-416,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-4
4.

Conference Proceedings
Conference Proceedings
4. (311) Defect Formation and Evolution for Si and B Implants
Law, M.E. ; Jones, K.S.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.374-378,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-4
5.

Conference Proceedings
Conference Proceedings
5. EFFECTS OF LOW-DOSE SILICON, CARBON AND OXYGEN IMPLANTATION DAMAGE ON DIFFUSION OF PHOSPHORUS IN SILICON
Chaudhry, S. ; Law, M.E.
Pub. info.: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology.  pp.1041-1049,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-10
6.

Conference Proceedings
Conference Proceedings
6. USING OZIDATION TO STUDY THE REACTION BETWEEN POINT DEFFECTS AND DISLOCATION LOOPS
Meng, H.L. ; Chen, J. ; Robinson, H.G. ; Law, M.E. ; Slinkman, J.A. ; Jones, K.S.
Pub. info.: Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.236-242,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-6
7.

Conference Proceedings
Conference Proceedings
7. A TWO DIMENSION MODEL OF DISLOCATION LOOPS IN SILICON
Park, H. ; Law, M.E.
Pub. info.: Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.228-235,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-6
8.

Conference Proceedings
Conference Proceedings
8. A Two-Dimensional Model for Strain from Dislocation Loops in Ion-Implanted Silicon
Chaudhry, S. ; Thompson, R.H. ; Jones, K.S. ; Law, M.E.
Pub. info.: ULSI science and technology, 1995 : proceedings of the Fifth International Symposium on Ultra Large Scale Integration Science and Technology.  pp.32-42,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-5