1.

Conference Proceedings
Conference Proceedings
1. Reaction of Excess Silicon Interstitials in the Presence of Arsenic and Germanium
Brindos, R. ; Keys, P.H. ; Griglione, M. ; Jones, K. S. ; Law, M. E. ; Agarwal, Aditya ; Andideh, Ebrahim
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B8.4-,  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 610
2.

Conference Proceedings
Conference Proceedings
2. Junction Depth Reduction Of Ion Implanted Boron In Silicon Through Fluorine Ion Implantation
Robertson, L. S. ; Warnes, P. N. ; Jones, K. S. ; Earles, S. K. ; Law, M. E. ; Downey, D. F. ; Falk, S. ; Liu, J.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B4.2-,  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 610