1.

Conference Proceedings
Conference Proceedings
1. Properties of Gate-Quality Silicon Nitride and Oxynitride Dielectrics Deposited Using an Electron Cyclotron-Resonance Plasma Source
Landheer, D. ; Hulse, J.E. ; Quance, T. ; Aers, G.C. ; Sproule, G.I. ; Lennard, W.N. ; Simpson, P.J. ; Nlassoumi, G.R.
Pub. info.: Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium.  pp.75-89,  1999.  Pennington, New Jersey.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-6
2.

Conference Proceedings
Conference Proceedings
2. Interface state densities for SiNx:H on cleaved GaAs and InP(110)
Landheer, D. ; Hulse, J.E. ; Rajesh, K.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.253-258,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573