1.

Conference Proceedings
Conference Proceedings
1. Edge Termination Technique for SiC Power Devices
Kim, H.W. ; Bahng, W. ; Song, G.H. ; Kim, S.C. ; Kim, N.K. ; Kim, E.D.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1241-1244,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
2.

Conference Proceedings
Conference Proceedings
2. 4H-SiC p-n Diode using Internal Ring (IR) Termination Technique
Song, G.H. ; Kim, H.W. ; Bahng, W. ; Kim, S.C. ; Kim, N.K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1041-1044,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
3.

Conference Proceedings
Conference Proceedings
3. Fabrication and Characterization of 4H-SiC pn Diode with Field Limiting Ring
Bahng, W. ; Song, G.H. ; Kim, H.W. ; Seo, K.S. ; Kim, N.K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1013-1016,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460