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13 results

Conference Proceedings

1. Low Frequency Noise in 4H-SiC Schottky Diodes Under Forward Bias

E.I. Shabunina ; M.E. Levinshtein ; N.M. Shmidt ; P.A. Ivanov ; J.W. Palmour

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.559-562, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

2. Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices

M. O'Loughlin ; A. Burk Jr. ; D. Tsvetkov ; S. Ustin ; J.W. Palmour

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.167-172, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

3. Silicon Carbide MOSFETs for Medium Voltage Megawatt Scale Systems

V. Pala ; E. van Brunt ; B. Hull ; S. Allen ; J.W. Palmour

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.970-973, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

4. 4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics

S.L. Rumyantsev ; M.S. Shur ; M.E. Levinshtein ; P.A. Ivanov ; J.W. Palmour

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.1105-1108, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

5. Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings

L. Cheng ; J.W. Palmour ; A.K. Agarwal ; S.T. Allen ; E.V. Brunt

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.1089-1095, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

6. High-Mobility SiC MOSFETs with Alkaline Earth Interface Passivation

D.J. Lichtenwalner ; V. Pala ; B. Hull ; S. Allen ; J.W. Palmour

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.671-676, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

7. A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed

Q.C.J. Zhang ; J. Richmond ; C. Capell ; A.K. Agarwal ; J.W. Palmour

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.1045-1048, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

8. Static and Dynamic Performance Evaluation of >13 kV SiC-ETO and its Application as a Solid-State Circuit Breaker

M.A. Rezaei ; G.Y. Wang ; A.Q. Huang ; L. Cheng ; J.W. Palmour

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.1025-1029, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

9. Electrical Properties and Interface Structure of SiC MOSFETs with Barium Interface Passivation

D.J. Lichtenwalner ; J.H. Dycus ; W.Z. Xu ; J.M. Lebeau ; B. Hull ; S. Allen ; J.W. Palmour

Pub. info.:	Silicon Carbide and Related Materials 2016. pp.163-166, 2017. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	897

10.

Conference Proceedings

10. Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor

S.H. Ryu ; D.J. Lichtenwalner ; E. van Brunt ; C. Capell ; M.J. O'Loughlin ; C. Jonas ; Y. Lemma ; J. Zhang ; J. Richmond ; A.A. Burk ; B. Hull ; H. O'Brien ; A. Ogunniyi ; A.J. Lelis ; J. Casady ; D. Grider ; S. Allen ; J.W. Palmour

Pub. info.:	Silicon Carbide and Related Materials 2016. pp.587-590, 2017. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	897

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