1.

Conference Proceedings
Conference Proceedings
1. Quasi-three-dimensional device simulation of fully depleted MOSFET/SOI focused on surface roughness
Nakao, M. ; likawa, H. ; Izumi, K.
Pub. info.: Silicon-on-insulator technology and devices XI : proceedings of the international symposium.  pp.373-378,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-5
2.

Conference Proceedings
Conference Proceedings
2. Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
Tsuehida, H. ; Miyanagi, T. ; Kamata, I. ; Nakamura, T. ; Izumi, K. ; Nakayama, K. ; Ishii, R. ; Asano, K. ; Sugawara, Y.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.97-100,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
3.

Conference Proceedings
Conference Proceedings
3. Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers
Izumi, S. ; Tsuchida, H. ; Tawara, T. ; Kamata, I. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.323-326,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
4.

Conference Proceedings
Conference Proceedings
4. In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC Surfaces
Jikimoto, T. ; Tsuchida, H. ; Kamata, I. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.709-712,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements
Tsuji, T. ; Izumi, S. ; Ueda, A. ; Fujisawa, H. ; Ueno, K. ; Tsuchida, H. ; Kamata, I. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1141-1144,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes
Kamata, I. ; Tsuchida, H. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1137-1140,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Electroluminescence Analysis of Al+ and B+ Implanted pn Diodes
Fujisawa, H. ; Tsuji, T. ; Izumi, S. ; Ueno, K. ; Kamata, I. ; Tsuchida, T. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1297-1300,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Development of SIC substrate with buried oxide layer for electron-photon merged devices
Nakao, M. ; Hirai, S. ; Izumi, K.
Pub. info.: Silicon-on-insulator technology and devices XI : proceedings of the international symposium.  pp.93-98,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-5
9.

Conference Proceedings
Conference Proceedings
9. Estimation of oxygen dose by spectroscopic ellipsometry and investigation of oxide formation mechanism by FT-IR for l6O+-implanted Si wafers
likawa, H. ; Nakao, M. ; Izumi, K.
Pub. info.: Silicon-on-insulator technology and devices XI : proceedings of the international symposium.  pp.87-92,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-5
10.

Conference Proceedings
Conference Proceedings
10. Homoepitaxial Growth and Characterization of Thick SiC Layers With a Reduced Micropipe Density
Tsuchida, H. ; Kamata, I. ; Izumi, S. ; Tawara, T. ; Jikimoto, T. ; Miyanagi, T. ; Nakamura, T. ; Izumi, K.
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.35-46,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815