1.

Conference Proceedings
Conference Proceedings
1. MECHANISMS OF Au-GaAs REACTION AND EFFECTS ON OHMIC FORMATION
Yeh, Lu-Min L. ; Holloway, P. H.
Pub. info.: Advances in materials, processing, and devices in III-V compound semiconductors.  pp.607-612,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 144
2.

Conference Proceedings
Conference Proceedings
2. *CHEMICAL COMPOSITION AND ELECTRICAL BEHAVIOR OF CONTACTS ON HIGHLY AND MODERATLEY SILICON-DOPED GaAs
Holloway, P. H. ; Wang, Y.-X. ; Xie, Y. -J. ; Bussing, T. D.
Pub. info.: Thin films : the relationship of structure to properties : symposium held April 15-17, 1985, San Francisco, California, U.S.A..  pp.235-246,  1985.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 47
3.

Technical Paper
Technical Paper
3. MAGNETRON SPUTTERED GOLD CONTACTS ON n-GaAs
Buonaquisti, A. D. ; Matson, R. J. ; Holloway, P. H.
Pub. info.: NASA Technical Reports.  (NASA-CR-173257),  pp.1-11,  1984.  National Aeronautics and Space Administration
4.

Technical Paper
Technical Paper
4. OHMIC CONTACTS, IRRADIATION EFFECTS, AND THIN FILM GROWTH OF GaSs AND AL SUB 1-x Ga SUB x As Final Technical Report
Holloway, P. H.
Pub. info.: NASA Technical Reports.  (NASA-CR-173257),  pp.1-3,  1984.  National Aeronautics and Space Administration
5.

Technical Paper
Technical Paper
5. Effect of Ion Sputtering on the Interface Chemistry and Electrical Properties of Au/n-GaAs (100) Schottky Contacts
Wang, Y. X. ; Holloway, P. H.
Pub. info.: NASA Technical Reports.  (NASA-CR-173257),  pp.1-8,  1984.  National Aeronautics and Space Administration