1.

Conference Proceedings
Conference Proceedings
1. Fe-Centers in GaN as Candidates for Spintronics Applications
Malguth, Enno ; Hoffmann, Axel ; Philips, Matthew ; Gehlhoff, Wolfgang
Pub. info.: Progress in semiconductor materials V--novel materials and electronic and optoelectronic applications : symposium held November 28-December 1, 2005, Boston, Massachusetts, U.S.A..  pp.219-224,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 891
2.

Conference Proceedings
Conference Proceedings
2. Properties of InN Grown by High-Pressure CVD
Alevli, Mustafa ; Durkaya, Goksel ; Woods, Vincent ; Haboeck, Ute ; Kang, Hun ; Senawiratne, Jayantha ; Strassburg, Martin ; Ferguson, Ian T. ; Hoffmann, Axel ; Dietz, Nikolaus
Pub. info.: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.77-82,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 892
3.

Conference Proceedings
Conference Proceedings
3. Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate
Dworzak, Matthias ; Stempel, Thomas ; Hoffmann, Axel ; Franssen, Gijs ; Grzanka, S. ; Suski, Tadeusz ; Czenecki, R. ; Leszczynski, M. ; Grzegory, I.
Pub. info.: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.825-830,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 892