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28 results

Conference Proceedings

1. IMPLANT ISOLATION OF DEVICE STRUCTURES CONTAINING BURIED, HIGHLY-DOPED LAYERS

Pearton, S.J. ; Ren, F. ; D'asaro, L.A. ; Hobson, W.S. ; Fullowan, T.R. ; Lothian, J. ; Abernathy, C.R. ; Kopf, R.F. ; Kuo, J.-M.

Pub. info.:	Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.. pp.451-458, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	216

Conference Proceedings

2. GaAs QUANTUM WELL INFRARED PHOTODETECTORS GROWN BY OMVPE

Hobson, W.S. ; Zussman, A. ; Levine, B.F. ; Pearton, S.J. ; Swaminathan, V. ; Luther, L.C.

Pub. info.:	Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.. pp.501-506, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	216

Conference Proceedings

3. REACTIVE ION ETCHING OF In-BASED III-V SEMICONDUCTORS COMPARISON OF Cl AND C2H6 CHEMISTRIES

Pearton, S.J. ; Chakrabarti, U.K. ; Baiocchi, F.A. ; Hobson, W.S.

Pub. info.:	In-situ patterning : selective area deposition and etching : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.417-424, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	158

Conference Proceedings

4. THE INCORPORATION AND BEHAVIOR OF OXYGEN IN AlGaAs GROWN BY MOMBE USING TRIMETHYLAMINE ALANE

Abernathy, C.R. ; Song, J. ; Hobson, W.S. ; Pearton, S.J. ; Ren, F. ; Bohling, D.A. ; Muhr, G.T.

Pub. info.:	Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A.. pp.183-194, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	204

Conference Proceedings

5. Wet and Dry Etch Selectivity For the GaAs/AlGaAs and GaAs/InGaP Systems

Hays, D. ; Abernathy, C.R. ; Pearton, S.J. ; Ren, F. ; Hobson, W.S.

Pub. info.:	Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX). pp.201-212, 1998. Pennington, N. J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-12

Conference Proceedings

6. High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar

Lee, J.W. ; Pearton, S.J. ; Lambers, E.S. ; Mileham, J.R. ; Abernathy, C.R. ; Hobson, W.S. ; Ren, F. ; Shul, R.J.

Pub. info.:	Proceedings of the Twenty-fourth State-of-the-Art Program on Compound Semiconductors. pp.203-213, 1996. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	96-2

Conference Proceedings

7. PROPERTIES OF Pt/Ti CONTACTS TO III-V MATERIALS

Katz, A. ; Nakahara, S. ; Chu, S.N.G. ; Weir, B.E. ; Abernathy, C.R. ; Hobson, W.S. ; Pearton, S.J. ; Savin, W.

Pub. info.:	Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.. pp.305-312, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	216

Conference Proceedings

8. ION IMPLANT ACTIVATION AND REDISTRIBUTION IN AlXGa1-XAs

Pearton, S.J. ; Hobson, W.S. ; Von Neida, A.E. ; Haegel, N.M. ; Jones, K.S. ; Morris, N. ; Sealy, B.J.

Pub. info.:	Beam-solid interactions : physical phenomena : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.665-670, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	157

Conference Proceedings

9. PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF MOCVD-GROWN: GaAs:V

Kao, Y.J. ; Haegel, N.M. ; Hobson, W.S.

Pub. info.:	Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.63-68, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	163

10.

Conference Proceedings

10. HYDROGEN PASSIVATION OF INTERFACIAL DEFECTS IN MOCVD GROWN GaAs/InP

Swaminathan, V. ; Chakrabarti, U.K. ; Hobson, W.S. ; Caruso, R. ; Lopata, J. ; Pearton, S.J.

Pub. info.:	Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.489-494, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	163

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