1.

Conference Proceedings
Conference Proceedings
1. Investigation of Structural Stability in 4H-SiC Structures with Heavy Ion Implanted Interface
Galeckas, A. ; Hallen, A. ; Schoner, A. ; Linnros, J. ; Pirouz, P.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.395-398,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Electrical and Optical Characterisation of High Voltage 4H Silicon Carbide Diodes
Hallen, A. ; Zimmermann, U. ; Osterman, J. ; Galeckas, A. ; Linnros, J. ; Breitholtz, B.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.82-89,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
3.

Conference Proceedings
Conference Proceedings
3. Investigation of Stacking Fault Formation in Hydrogen Bombarded 4H-SiC
Galeckas, A. ; Kortegaard Nielsen, H. ; Linnros, J. ; Hallen, A. ; Svensson, B. G. ; Pirouz, P.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.327-330,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
4.

Conference Proceedings
Conference Proceedings
4. Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions
Kalinina, E. ; Kholuyanov, G. ; Onushkin, G. ; Davydov, D. ; Strel'chuk, A. ; Konstantinov, A. ; Hallen, A. ; Skuratov, V. ; Kuznetsov, A.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.377-380,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
5.

Conference Proceedings
Conference Proceedings
5. High Energy Resolution Detectors Based on 4H-SiC
Ivanov, A. ; Kalinina, E. ; Kholuyanov, G. ; Strokan, N. ; Onushkin, G. ; Konstantinov, A. ; Hallen, A. ; Kuznetsov, A.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.1029-1032,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
6.

Conference Proceedings
Conference Proceedings
6. Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures
Strel'chuk, A. M. ; Kalinina, E. V. ; Konstantinov, A. O. ; Hallen, A.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.993-996,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
7.

Conference Proceedings
Conference Proceedings
7. Carrier Concentrations in Implanted and Epitaxial 4H-SiC by Scanning Spreading Resistance Microscopy
OEsterman, J. ; Anand, S. ; Linnarsson, M.K. ; Hallen, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.663-666,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Range Distributions of Implanted Ions in Silicon Carbide
Janson, M.S. ; Linnarsson, M.K. ; Hallen, A. ; Svensson, B.G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.779-782,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Damage Evolution and Recovery in Al-Implanted 4H-SiC
Zhang, Y. ; Weber, W. ; Jiang, W. ; Hallen, A. ; Possnert, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.815-818,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices
Kalinina, E. ; Kholujanov, G. ; Gol'dberg, Yu. ; Blank, T. ; Onushkin, G. ; Strel'chuk, A. ; Violina, G. ; Kossov, V. ; Yafaev, R. ; Hallen, A. ; Konstantinov, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.835-838,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393