1.

Conference Proceedings
Conference Proceedings
1. Novel Approach for Improving Interface Quality of 4H-SiC MOS Devices with UV Irradiation and Subsequent Thermal Annealing
H. Watanabe ; D. Ikeguchi ; T. Kirino ; S. Mitani ; Y. Nakano
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.741-744,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. Effect of Damage Removal Treatment after Trench Etching on the Reliability of Trench MOSFET
S. Miyahara ; H. Watanabe ; T. Yamamoto ; K. Tsuruta ; S. Onda
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.789-792,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
3.

Conference Proceedings
Conference Proceedings
3. Accuracy of the Energy Distribution of the Interface States at the SiO2/SiC Interface by Conductance Method
M. Noguchi ; T. Iwamatsu ; H. Amishiro ; H. Watanabe ; S. Nakata
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.437-440,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
4.

Conference Proceedings
Conference Proceedings
4. Low Resistivity SiC Devices with a Drift Layer Optimized by Variational Approach
T. Tominaga ; N. Kawabata ; A. Koyama ; T. Tanaka ; H. Watanabe
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.765-768,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
5.

Conference Proceedings
Conference Proceedings
5. Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide
K. Yamamoto ; M. Nagaya ; H. Watanabe ; E. Okuno ; T. Yamamoto
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.477-480,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
6.

Conference Proceedings
Conference Proceedings
6. Texture Evolution in Titanium and Aluminum Sheets Subjected to Friction Roll Surface Processing and Subsequent Annealing
Y. Takayama ; M.Q. Shi ; Y. Ougiya ; K. Nonaka ; H. Watanabe
Pub. info.: Textures of materials : selected, peer reviewed papers from the 16th International Conference on Textures of Materials, (ICOTOM 16), 12-17 December 2011, Mumbai, India.  pp.457-460,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 702-703
7.

Conference Proceedings
Conference Proceedings
7. Evaluation of Organic Thin Film Solar Cells Using 3-Diode Equivalent Circuit Model with Inverted Diode
Y. Sakurada ; Y. Ota ; H. Watanabe ; H. Murata ; K. Nishioka
Pub. info.: Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan.  pp.179-182,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 725
8.

Conference Proceedings
Conference Proceedings
8. Synchrotron Radiation Photoelectron Spectroscopy Study of Thermally Grown Oxides on 4H-SiC(0001) Si-Face and (000-1) C-Face Substrates
H. Watanabe ; T. Hosoi ; T. Kirino ; Y. Uenishi ; A. Chanthaphan
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.697-702,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
9.

Conference Proceedings
Conference Proceedings
9. Defect Related Leakage Current Components in SiC Schottky Barrier Diode
K. Ohtsuka ; T. Nakatani ; A. Nagae ; H. Watanabe ; Y. Nakaki
Pub. info.: Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan.  pp.53-56,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 725
10.

Conference Proceedings
Conference Proceedings
10. Shallow and Deep Levels in Al+-Implanted p-Type 4H-SiC Measured by Thermal Admittance Spectroscopy
K. Kawahara ; H. Watanabe ; N. Miura ; S. Nakata ; S. Yamakawa
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.403-406,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823