1.

Conference Proceedings
Conference Proceedings
1. Nitrogen vs. Phosphorus as Implant Species for High-Voltage Lateral RESURF MOSFETs on 4H-SiC
Chatty, K. ; Banerjee, S. ; Chow, T. P. ; Gutmann, R. J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1279-1282,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
2.

Conference Proceedings
Conference Proceedings
2. Electrical Characteristics and Reliability of 4H-SiC PiN Diodes Fabricated on In-House Grown and Commercial Epitaxial Films
Losee, P. A. ; Li, C. ; Seiler, J. ; Stahlbush, R. E. ; Chow, T. P. ; Bhat, I. B. ; Gutmann, R. J.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.961-964,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
3.

Conference Proceedings
Conference Proceedings
3. Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers
Chatty, K. ; Khemka, V. ; Chow, T. P. ; Gutmann, R. J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1331-1334,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
4.

Conference Proceedings
Conference Proceedings
4. Breakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface Implant
Khemka, V. ; Chatty, K. ; Chow, T. P. ; Gutmann, R. J.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1211-1214,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
5.

Conference Proceedings
Conference Proceedings
5. Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay
Kumar, R. J. ; Losee, P. A. ; Li, C. ; Seiler, J. ; Bhat, I. B. ; Chow, T. P. ; Borrego, J. M. ; Gutmann, R. J.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.405-408,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485