1.

Conference Proceedings
Conference Proceedings
1. ENHANCED CARBON DIFFUSION IN SILICON DURING 900 C ANNEALING
Ladd, L. A. ; kalejs, J. P. ; Gosele, U.
Pub. info.: Impurity diffusion and gettering in silicon : symposium held November 27-30, 1984, Boston, Massachusetts, U.S.A..  pp.89-94,  1985.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 36
2.

Conference Proceedings
Conference Proceedings
2. EFFECT OF CONCENTRATION GRADIENT ON PHASE STABILITY
Tu, K. N. ; Gosele, U.
Pub. info.: Alloy phase diagrams : symposium held November 1982 in Boston, Massachusetts, U.S.A..  pp.375-376,  1983.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 19
3.

Conference Proceedings
Conference Proceedings
3. THERMAL DONOR FORMATION BY THE AGGLOMERATION OF OXYGEN IN SILICON
Gosele, U. ; Tan,. T. Y.
Pub. info.: Defects in semiconductors II : symposium held November 1982 in Boston, Massachusetts, U.S.A..  pp.153-158,  1983.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 14
4.

Conference Proceedings
Conference Proceedings
4. MECHANISMS OF DOPING-ENHANCED SUPERLATTICE DISORDERING AND OF GALLIUM SELF-DIFFUSION IN GaAs
Tan, T. Y. ; Gosele, U. ; Marioton, B. P. R.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.605-612,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
5.

Conference Proceedings
Conference Proceedings
5. DISSOLUTION AND DISINTEGRATION OF UNIFORM SiO2 LAYERS DURING DIRECT SILICON WAFER BONDING
Ahn, K. -Y. ; Gosele, U. ; Smith, P.
Pub. info.: Silicon-on-insulator and buried metals in semiconductors : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.501-506,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 107
6.

Conference Proceedings
Conference Proceedings
6. THE ROLE OF CARBON AND POINT DEFECTS IN SILICON
Gosele, U.
Pub. info.: Oxygen, carbon, hydrogen, and nitrogen in crystalline silicon : symposium held December 2-5, 1985, Boston, Massachusetts, U.S.A..  pp.419-432,  1986.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 59
7.

Conference Proceedings
Conference Proceedings
7. *THE NATURE OF POIND DEFECTS AND THEIR INFLUENCE ON DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURE,
Gosele, U.
Pub. info.: Defects in semiconductors II : symposium held November 1982 in Boston, Massachusetts, U.S.A..  pp.45-60,  1983.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 14