1.

Conference Proceedings
Conference Proceedings
1. Modeling of Boron Diffusion After Shallow Implants Using BF2
Hoeffler, A. ; Feudel, T. ; Strecker, N. ; Fichtner, W.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.75-84,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-4
2.

Conference Proceedings
Conference Proceedings
2. AN APPROACH TO THREE DIMENSIONAL VLSI PORSESS SIMULATION
Hegarty, C. ; Feudel, T. ; Hitschfeld, N. ; Ryter, R. ; Streeker, N. ; Westermann, M. ; Fichtner, W.
Pub. info.: Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.565-575,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-6
3.

Conference Proceedings
Conference Proceedings
3. Modeling of Damage Accumulation During Ion Implantation into Single-Crystalline Silicon
Posselt, M. ; Schmidt, B. ; Murthy, C.S. ; Feudel, T.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.453-467,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-4