1.

Conference Proceedings
Conference Proceedings
1. An Industrial Perspective of Recent Developments in Compound Semiconductors ....
Ferguson, I. ; Thompson, A. ; Tran, C. ; Schurman, M. ; Pelczynski, M. ; Li, S.
Pub. info.: Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX).  pp.52-65,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-4
2.

Conference Proceedings
Conference Proceedings
2. Growth of GaN Based Devices by Production Scale MOCVD
Schurman, M.J. ; Tran, C.A. ; Karlicek, R.F., Jr. ; Li, Y. ; Eliashevich, I. ; Brown, M.G. ; Ferguson, I. ; Koszi, L. ; Stall, R.A. ; Liang, S. ; Lu, Y.
Pub. info.: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors.  pp.78-86,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-2
3.

Conference Proceedings
Conference Proceedings
3. Breakdown Behavior of AlGaN MSM uv Photodetectors
Liang, S. ; Liu, Y. ; Lu, Y. ; Schurman, M. ; Tran, C. A. ; Ferguson, I.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.1131-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
4.

Conference Proceedings
Conference Proceedings
4. Temperature Dependence of Bound Exciton Emissions in GaN
Chtchekine, D. G. ; Gilliland, G. D. ; Feng, Z. C. ; Chua, S. J. ; Wolford, D. J. ; Ralph, S. E. ; Schurman, M. J. ; Ferguson, I.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.47.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
5.

Conference Proceedings
Conference Proceedings
5. Nondestructive and Whole Wafer Characterization of III-V IR Epitaxial Materials Prepared by Turbo Disk Metalorganic Chemical Vapor Deposition
Feng, Z. C. ; Pelczynski, M. ; Beckham, C. ; Cooke, P. ; Ferguson, I. ; Stall, R. A.
Pub. info.: Infrared applications of semiconductors II : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.13-,  1998.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 484
6.

Conference Proceedings
Conference Proceedings
6. Surface and Interface Properties of InSb Epitaxial Thin Films Grown on GaAs by Low-Pressure Metalorganic Chemical Vapor Deposition
Li, K. ; Tan, K. L. ; Pelczynski, M. ; Feng, Z. C. ; Wee, A. T. S. ; Lin, J. Y. ; Ferguson, I. ; Stall, R. A.
Pub. info.: Infrared applications of semiconductors II : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.63-,  1998.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 484
7.

Conference Proceedings
Conference Proceedings
7. Spatial Characterization of Doped SiC Wafers
Burton, J. C. ; Sun, L. ; Pophristic, M. ; Li, J. ; Long, F. H. ; Feng, Z. C. ; Ferguson, I.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.297-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
8.

Conference Proceedings
Conference Proceedings
8. Optical characterization of SiC wafers
Burton, J. C. ; Pophristic, M. ; Long, F. H. ; Ferguson, I.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.201-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
9.

Conference Proceedings
Conference Proceedings
9. Homo-epitaxial and selective area growth of 4H and 6H silicon carbide using a resistively heated vertical reactor
Eshun, E. ; Taylor, C. ; Spencer, M. G. ; Kornegay, K. ; Ferguson, I. ; Gurray, A. ; Stall, R.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.173-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
10.

Conference Proceedings
Conference Proceedings
10. GaN-Based MSM uv Photodetectors
Liang, S. ; Cai, W. ; Li, Y. ; Liu, Y. ; Lu, Y. ; Tran, C. A. ; Karlicek, R. F., Jr. ; Ferguson, I.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1221-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449