1.

Conference Proceedings
Conference Proceedings
1. Integrated SAC and Liner Etch for 0.15 um Node Technology
Fang, S. ; Dobuzinsky, D. ; Gutmann, A.
Pub. info.: Plasma etching processes for sub-quarter micron devices : proceedings of the international symposium.  pp.233-238,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-30
2.

Conference Proceedings
Conference Proceedings
2. CHARGING EFFECTS ON ION TRAJECTORIES IN PLASMA ETCHING
Murakawa, S. ; Fang, S. ; McVittie, J.P.
Pub. info.: Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.483-490,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-6
3.

Conference Proceedings
Conference Proceedings
3. Endpoint Detection of Oxide Etch with CO Containing CxFyH z Chemistry for Small Open Area
Fang, S. ; Huang, J. ; Liu, Y. ; Carter, D.
Pub. info.: Proceedings of the twelfth International Symposium on Plasma Processing.  pp.172-180,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-4
4.

Conference Proceedings
Conference Proceedings
4. CVD-Growth of Thin-Film Layerd Se-Carbon Compounds
Grigorian, L. ; Fang, S. ; Sumanasekera, G. ; Rao, A. M. ; Schrader, L. ; Eklund, P. C.
Pub. info.: Solid-state chemistry of inorganic materials : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.83-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 453