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10 results

Conference Proceedings

1. Low-Temperature Homoepitaxial Growth of GaN Using Hyperthermal Molecular Beams

Michel, A. ; Chen, E. ; Thomson, D. ; Nam, O. ; Davis, R. F. ; Lamb, H. H.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.437-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

2. Growth and Electrochemical Characterization of Single-Phase MoxN Films for the Fabrication of Hybrid Double-Layer Capacitors

Roberson, S. L. ; Evans, D. ; Finello, D. ; Davis, R. F.

Pub. info.:	Materials for electrochemical energy storage and conversion II--batteries, capacitors, and fuel cells : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.669-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	496

Conference Proceedings

3. Doping of GaN by Ion Implantation: Does it Work?

Suvkhanov, A. ; Hunn, J. ; Wu, W. ; Thomson, D. ; Price, K. ; Parikh, N. ; Irene, E. ; Davis, R. F. ; Krasnobaev, L.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.475-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

4. Achievement of Coalesced Oriented Diamond Films on Nickel by Optical Process Control and Methane Enrichment

Yang, P. C. ; Wolden, C. A. ; Liu, W. ; Schlesser, R. ; Davis, R. F. ; Prater, J. T. ; Sitar, Z.

Pub. info.:	Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. pp.213-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	483

Conference Proceedings

5. Homoepitaxial Growth of GaN Using Seeded Supersonic Molecular Beams

Chen, E. ; Zhang, S. ; Michel, A. ; Davis, R. F. ; Lamb, H. H.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.331-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

6. Organometallic Vapor-Phase Lateral Epitaxy of Low Defect Density GaN Layers

Nam, O. H. ; Zheleva, T. S. ; Bremser, M. D. ; Thomson, D. B. ; Davis, R. F.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.301-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

7. Selection, Growth, and Characterization of Gate Insulators on MOCVD Gallium Nitride for the Use in High Power Field-Effect Devices

Therrien, R. J. ; Nam, O. H. ; Bremser, M. D. ; Lithicum, K. ; Nimii, H. ; Carlson, E. P. ; Lucovsky, G. ; Davis, R. F.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.1107-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

8. Ni/Si-Based Ohmic Contacts to p- and n-Type GaN

Kaminska, E. ; Piotrowska, A. ; Barcz, A. ; Guziewicz, M. ; Kasjaniuk, S. ; Bremser, M. D. ; Davis, R. F. ; Dynowska, E. ; Kwiatkowski, S.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.1077-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

9. Location of Residual Donors in GaN Epitaxial Layers

Glaser, E. R. ; Kennedy, T. A. ; Wickenden, A. E. ; Koleske, D. D. ; Perry, W. G. ; Davis, R. F.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.561-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

10.

Conference Proceedings

10. Lattice Location and Luminescence Behavior of Rare-Earth Elements Implanted in GaN

Dalmer, M. ; Restle, M. ; Stotzler, A. ; Vetter, U. ; Hofsass, H. ; Bremser, M. D. ; Ronning, C. ; Davis, R. F. ; The Isolde Collaboration,

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.1021-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

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