1.

Conference Proceedings
Conference Proceedings
1. Energy levels associated with the metastable state of EL2
Stievenard,D. ; Delerue,C. ; Bremond,G. ; Guillot,G. ; Azoulay,R. ; Bardeleben,H.J.von ; Bourgoin,J.C. ; Portal,J.C. ; Ranz,E.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.911-916,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87
2.

Conference Proceedings
Conference Proceedings
2. Schottky diodes on Si1-x-yGexCy alloys:measurernent of band off-set by DLTS
Serpentini,M. ; Bremond,G. ; Meyer,F.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.165-170,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
3.

Conference Proceedings
Conference Proceedings
3. Defect Characterization in P Isotype Si/SiGe/Si Heterostructures by Space Charge Spectroscopy
Bremond,G. ; Souifi,A. ; Degroodt,P. ; Warren,P. ; Dutartre,D. ; Guillot,G.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.495-500,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
4.

Conference Proceedings
Conference Proceedings
4. Electrical properties of Yb.Er doped InP
Seghier,D. ; Benyattou,T. ; Bremond,G. ; Ducroquet,F. ; Mar-chand,J.-J. ; Guillot,G. ; Lhomer,C. ; Larnbert,B. ; Toudic,Y. ; Corre,A.Le.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.677-682,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87