1.

Conference Proceedings
Conference Proceedings
1. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
Lendenmann, H. ; Dahlquist, F. ; Johansson, N. ; Soederholm, R. ; Nilsson, P.A. ; Bergman, J.P. ; Skytt, P.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.727-730,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
2.

Conference Proceedings
Conference Proceedings
2. Proton Irradiation Induced Defects in 4H-SiC
Storasta, L. ; Carlsson, F.H.C. ; Sridhara, S.G. ; Aberg, D. ; Bergman, J.P. ; Hallen, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.431-434,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
3.

Conference Proceedings
Conference Proceedings
3. Neutron Irradiation of 4H SiC
Carlsson, F.H.C. ; Storasta, L. ; Magnusson, B. ; Bergman, J.P. ; Skoeld, K. ; Janzen, E.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.555-558,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
4.

Conference Proceedings
Conference Proceedings
4. Doping of Silicon Carbide by Ion Implantation
Svensson, B.G. ; Hallen, A. ; Linnarsson, M.K. ; Kuznetsov, A.Yu. ; Janson, M.S ; Aberg, D. ; Oesterman, J. ; Persson, P.O.A. ; Hultman, L. ; Storasta, L. ; Carlsson, F.H.C. ; Bergman, J.P. ; Jagadish, C. ; Morvan, E.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.549-554,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
5.

Conference Proceedings
Conference Proceedings
5. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
Bergman, J.P. ; Lendenmann, H. ; Nilsson, P.A. ; Lindefelt, U. ; Skytt, P.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.299-302,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
6.

Conference Proceedings
Conference Proceedings
6. Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC
Sridhara, S.G. ; Carlsson, F.H.C. ; Bergman, J.P. ; Henry, A. ; Janzen, E.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.377-380,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
7.

Conference Proceedings
Conference Proceedings
7. Electron Irradiation of 4H SiC by TEM: An Optical Study
Sridhara, S.G. ; Persson, P.O.Å. ; Carlsson, F.H.C. ; Bergman, J.P. ; Janzen, E. ; Evans, G. ; Steeds, J.W.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
8.

Conference Proceedings
Conference Proceedings
8. Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport
Pozina, G. ; Bergman, J.P. ; Monemar, B. ; Iwaya, M. ; Nitta, S. ; Amano, H. ; Akasaki, I.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.791-794,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356