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15 results

Conference Proceedings

1. AN ASSESSMENT OF ECR ARGON PLASMA ETCHING DAMAGE ON Si AND SiO2 INTERFACES

Nam, C. W. ; Ashok, S. ; Tsai, W. ; Day, M.E.

Pub. info.:	Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.861-868, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	279

Conference Proceedings

2. INTERACTION OF ATOMIC HYDROGEN WITH ION BOMBARDMENTS INDUCED DEFECTS AT Si/SiO2 INTERFACES

Kar, S. ; Ashok, S.

Pub. info.:	Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A.. pp.281-286, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	284

Conference Proceedings

3. Investigation of Defect Activation under Thermal Anneal in ECR H-Plasma Exposed Si

Chi, D.Z. ; Ashok, S. ; Theodore, D.

Pub. info.:	Proceedings of the eleventh International Symposium on Plasma Processing. pp.162-168, 1996. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	96-12

Conference Proceedings

4. ATOMIC HYDROGEN PASSIVATION OF HIGH ENERGY HYDROGEN IMPLANTS

Srikanth, K. ; Shenal, J. ; Ashok, S.

Pub. info.:	Low energy ion beam and plasma modification of materials : symposium held April 30-May 2, 1991, Anaheim, California, U.S.A.. pp.241-248, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	223

Conference Proceedings

5. HIGH PERFORMANCE THIN FILM TRANSISTORS FOR SCANNER APPLICATIONS

Hseig, B. -C. ; Hwakins, G. A. ; Ashok, S.

Pub. info.:	Polysilicon thin films and interfaces. pp.369-374, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	182

Conference Proceedings

6. SUPPRESSION OF ACCEPTOR DEACTIVATION IN SILICON BY DISORDERED SURFACE REGIONS

Srikanth, K. ; Ashok, S.

Pub. info.:	Materials issues in microcrystalline semiconductors : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.239-246, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	164

Conference Proceedings

7. PLASMA HYDROGENATION STUDIES ON LOW-TEMPERATURE MBE-GROWN GaAs

Nakagawa, O. S. ; Ashok, S. ; Zhang, K. ; Miller, D. L. ; Chung, W. K.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.437-442, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

Conference Proceedings

8. PASSIVATION OF ION-BEAM-INDUCED DEFECTS AT AND AROUND THE Si-SiP2 INTERFACE BY ION BEAM HYDROGENATION

Kar, S. ; Srikanth, K. ; Ashok, S.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.1049-1054, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

Conference Proceedings

9. ECR Hydrogen Plasma Treatment of Si: Defect Activation Under Thermal Anneal

Nam, C. W. ; Ashok, S.

Pub. info.:	Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.. pp.365-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	378

10.

Conference Proceedings

10. Ion Implantation-Induced Defects and the Influence of Titanium Silicidation

Chi, D. Z. ; Ashok, S. ; Theodore, D.

Pub. info.:	Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.. pp.275-, 1998. Warrendale, Pa. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	510

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