1.

Conference Proceedings
Conference Proceedings
1. Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching
A.Z. Zhang ; S.A. Reshanov ; A. Schöner ; W. Kaplan ; N. Kwietniewski
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.549-552,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
2.

Conference Proceedings
Conference Proceedings
2. Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO2 Interfaces
A.I. Mikhaylov ; A.V. Afanasyev ; V.V. Luchinin ; S.A. Reshanov ; A. Schöner
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.480-483,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
3.

Conference Proceedings
Conference Proceedings
3. Passivation of 4H-SiC/SiO2 Interface Traps by Oxidation of a Thin Silicon Nitride Layer
A.I. Mikhaylov ; A.V. Afanasyev ; V.V. Luchinin ; S.A. Reshanov ; A. Schöner
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.508-511,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
4.

Conference Proceedings
Conference Proceedings
4. Characterization of Al-Based High-k Stacked Dielectric Layers Deposited on 4H-SiC by Atomic Layer Deposition
M. Usman ; T. Pilvi ; M. Leskelä ; A. Schöner ; A. Hallén
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.441-444,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
5.

Conference Proceedings
Conference Proceedings
5. 3C-SiC MOS Based Devices: From Material Growth to Device Characterization
J. Lorenzzi ; R. Esteve ; N. Jegenyes ; S.A. Reshanov ; A. Schöner
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.433-436,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
6.

Conference Proceedings
Conference Proceedings
6. Deep Defects in 3C-SiC Generated by H+- and He+-Implantation or by Irradiation with High-Energy Electrons
M. Weidner ; L. Trapaidze ; G. Pensl ; S.A. Reshanov ; A. Schöner
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.439-442,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
7.

Conference Proceedings
Conference Proceedings
7. High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N2O Atmosphere
A.I. Mikhaylov ; S.A. Reshanov ; A. Schöner ; A.V. Afanasyev ; V.V. Luchinin
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.651-654,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
8.

Conference Proceedings
Conference Proceedings
8. Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs
R. Ghandi ; M. Domeij ; R. Esteve ; B. Buono ; A. Schöner
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.661-664,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
9.

Conference Proceedings
Conference Proceedings
9. Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect Transistors
S. Roensch ; S. Hertel ; S. Reshanov ; A. Schöner ; M. Krieger
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.436-439,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
10.

Conference Proceedings
Conference Proceedings
10. Silicon Carbide APD with Improved Detection Sensitivity and Stability
M. Bakowski ; A. Schöner ; I. Petermann ; S. Savage
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.1089-1092,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648