1.

Conference Proceedings
Conference Proceedings
1. Epitaxial Growth, Mechanical, Electrical Properties of SiC/Si and SiC/Poli-Si
M. Bosi ; G. Attolini ; B.E. Watts ; A. Roncaglia ; A. Poggi
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.897-900,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
2.

Conference Proceedings
Conference Proceedings
2. The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO2 Interface
I. Pintilie ; F. Moscatelli ; R. Nipoti ; A. Poggi ; S. Solmi
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.326-329,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
3.

Conference Proceedings
Conference Proceedings
3. Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO2 Capacitors at Low Temperature Caused by near Interface States
I. Pintilie ; F. Moscatelli ; R. Nipoti ; A. Poggi ; S. Solmi
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.346-349,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
4.

Conference Proceedings
Conference Proceedings
4. Nitridation of the SiO2/SiC Interface by N+ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs
F. Moscatelli ; A. Poggi ; S. Solmi ; R. Nipoti ; A. Armigliato
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.491-494,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
5.

Conference Proceedings
Conference Proceedings
5. Passivation by N Implantation of the SiO₂/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability
A. Poggi ; F. Moscatelli ; S. Solmi ; R. Nipoti
Pub. info.: Silicon Carbide 2010--materials, processing and devices : symposium held April 5-9, 2010, San Francisco, California.  pp.201-206,  2010.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 1246