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11 results

Conference Proceedings

1. Electrical Activation of B Implant in 6H-SiC

Valcheva,E. ; Paskova,T. ; Ivanov,I.S. ; Yakimova,R. ; Wahab,Q. ; Savage,S. ; Nordell,N. ; Hamis,C.I.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.705-708, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

2. AFM Study of In Situ Etching of 4H and 6H SiC Substrates

Karlsson,S. ; Nordell,N.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.363-366, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

3. 6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering

Paskova,T. ; Valcheva,E. ; Ivanov,I.G. ; Yakimova,R. ; Savage,S. ; Nordell,N. ; Harris,C.I.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.741-744, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

4. Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiC

Persson,P.O.A. ; Wahab,Q. ; Hultman,L. ; Nordell,N. ; Schoner,A. ; Rottner,K. ; Olsson,E. ; Linnarsson,M.K.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.413-416, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

5. Growth of 4H and 6H SiC in Trenches and Around Stripe Mesas

Nordell,N. ; Karlsson,S. ; Konstantinov,A.O.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.131-134, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

6. Thermostable Ohmic Contacts on p-Type SiC

Kassamakova,L. ; Kakanakov,R. ; Nordell,N. ; Savage,S.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.787-790, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

7. Deuterium Incorporation in Acceptor Doped Epitaxial Layers of 6H-SiC

Linnarsson,M.K. ; Janson,M. ; Schoner,A. ; Nordell,N. ; Karlsson,S. ; Svensson,B.G.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.761-764, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

8. SiC Surface Engineering for High Voltage JFET Applications

Ivanov,P.A. ; Kon'kov,0.I. ; Konstantinov,A.O. ; Panteleev,V.N. ; Samsonova,T.P. ; Nordell,N. ; Karlsson,S. ; Harris,C.I.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1081-1084, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

9. Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competiticn Epitaxy

Frank,T. ; Troffer,T. ; Pensl,G. ; Nordell,N. ; Karlsson,S. ; Schoner,A.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.681-684, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

10.

Conference Proceedings

10. Ionization Rates and Critical Fields in 4H SiC Junction Devices

Konstantinov,A.O. ; Wahab,Q. ; Nordell,N. ; Lindefelt,U.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.513-516, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

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Author: Nordell,N.