1.

Conference Proceedings
Conference Proceedings
1. Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD
Ellison,A. ; Kimoto,T. ; Ivanov,I.G. ; Wahab,Q. ; Henry,A. ; Kordina,O. ; Zhang,J. ; Hemmingsson,C.G. ; Gu,C.-Yu. ; Leys,M.R. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.103-106,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the(0001)Basal Plane
Hallin,C. ; Ellison,A. ; Ivanov,I.G. ; Henry,A. ; Son,N.T. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.123-126,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Cathodoluminescence of Defect Regions in SiC Epi-Films
MacMillan,M.F. ; Hultman,L. ; Hallin,C. ; Ivanov,I.G. ; Henry,A. ; Janzen,E. ; Galloway,S.A.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.653-656,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
4.

Conference Proceedings
Conference Proceedings
4. Near Band-Gap Emission in V-Inrplanted and Annealed 4H-SiC
Henry,A. ; Egilsson,T. ; Ivanov,I.G. ; Harris,C.I. ; Savage,S. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.497-500,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
5.

Conference Proceedings
Conference Proceedings
5. Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress
Ivanov,I.G. ; Lindefelt,U. ; Henry,A. ; Egilsson,T. ; Kordina,O. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.489-492,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
6.

Conference Proceedings
Conference Proceedings
6. Ga Bound Excitons in 6H-SiC
Henry,A. ; Hallin,C. ; Ivanov,I.G. ; Bergnan,J.P. ; Kordina,O. ; Monemar,B. ; Janzen,E.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.91-96,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
7.

Conference Proceedings
Conference Proceedings
7. Some Aspects of the Photoluminescence and Raman Spectroscopy of(1010)-and(1120)-Oriented 4H and 6H Silicon Carbide
Ivanov,I.G. ; Henry,A. ; Hallin,C. ; Egilsson,T. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.469-472,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
8.

Conference Proceedings
Conference Proceedings
8. Bound Exciton Recombination in Electron Irradiated 4H-SiC
Egilsson,T. ; Henry,A. ; Ivanov,I.G. ; Lindstrom,J.L. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.477-480,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
9.

Conference Proceedings
Conference Proceedings
9. High Growth Rate of α-SiC by Sublimation Epitaxy
Syvajarvi,M. ; Yakimova,R. ; MacMillan,M.F. ; Tuominen,M. ; Kakanakova-Georgieva,A. ; Hemmingsson,C.G. ; Ivanov,I.G. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.143-146,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268